LASER DIODE. ML720J16S Datasheet


ML720J16S DIODE. Datasheet pdf. Equivalent


Part Number

ML720J16S

Description

(ML7xx16) LASER DIODES 2.5Gbps InGaAsP DFB LASER DIODE

Manufacture

Mitsubishi Electric

Total Page 3 Pages
Datasheet
Download ML720J16S Datasheet


ML720J16S
MITSUBISHI LASER DIODES
ML7xx16 SERIES
2.5Gbps InGaAsP DFB LASER DIODE
TYPE
NAME
ML725B16F/ML720J16S/ML725J16F
DESCRIPTION
ML7xx16 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1310nm.
λ/4 shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML7xx16 can
operate in the wide temperature range form -20ºC to 85ºC without any
temperature control.
FEATURES
λ/4 phase shifted grating structure
Wide temperature range operation
(-20ºC to 85ºC )
High side-mode-suppression-ratio (typical 45dB)
High resonance frequency (typical 11GHz)
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
IF
Parameter
Output power
Laser forward current
www.DataSheet4U.com
VRL
IRD
VRD
Tc
Tstg
Laser reverse voltage
PD forward current
PD reverse voltage
Operation temperature
Storage temperature
APPLICATION
2.5Gbps transmission
Conditions
CW
-
Ratings
6
200
-2
-2
- 20
- -20 ~+85
- -40 ~+100
Unit
mW
mA
V
mA
V
ºC
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC)
Symbol
Parameter
Conditions
Ith Threshold current
CW
CW,Tc=85ºC
Iop Operation current
Vop
η
λp
SMSR
θ//
Operating voltage
Slope efficiency
Peak wavelength
Side mode suppression ratio
Beam divergence angle (parallel)
CW,Po=5mW
CW,Po=5mW,Tc=85ºC
CW,Po=5mW
CW,Po=5mW
CW,Po=5mW,Tc=-20ºC~+85ºC
CW,Po=5mW,Tc=-20ºC~+85ºC
CW,Po=5mW
θ⊥ (perpendicular) CW,Po=5mW
fr Resonance frequency
2.48832Gbps, Ibias=Ith,Ipp=40mA
tr,tf Rise and fall time(10%-90%)
2.48832Gbps, Ibias=Ith,Ipp=40mA
not including package
Im Monitoring current (PD)
Id Dark current (PD)
Ct Capacitance (PD)
CW,Po=5mW,VRD=1V
VRD=5V
VRD=5V,f=1MHz
Min.
-
-
-
-
-
0.18
1290
35
-
-
-
-
Limits
Typ.
10
35
30
75
1.1
0.25
1310
45
25
30
11
100
0.1 -
--
- 10
Max.
15
50
40
100
1.8
-
1330
-
40
47
-
150
Unit
mA
mA
mA
mA
V
mW/mA
nm
dB
deg.
deg.
GHz
psec
2.0 mA
0.1 µA
20 pF
MITSUBISHI
ELECTRIC
Jan. 2002

ML720J16S
OUTLINE DRAWINGS
ML725B16F
ML720J16S
ML725J16F
MITSUBISHI LASER DIODES
ML7xx16 SERIES
2.5Gbps InGaAsP DFB LASER DIODE
φ
5.6
+0
-0.03
φ 4.25
φ 3.55±0.1
(3)
(Dimension:mm)
(0.25)
(1) (2)
(4)
1±0.1
φ 2.0Min.
φ 1.0Min.
Emitting Facet
Reference Plane
φ 2.0±0.25
(P.C.D.)
(1)
4-φ 0.45±0.05
(2)
(4)
PD
(3)
Case
LD
(2) (1)
ML725B16F
φ
5.6
+0
-0.03
φ 4.25
φ 3.55±0.1
(3)
(Dimension:mm)
(0.25)
(1) (2)
(4)
1±0.1
φ 2.0Min.
φ 1.0Min.
Emitting Facet
Reference Plane
φ 2.0±0.25
(P.C.D.)
(1)
4-φ 0.45±0.05
(2)
(2) (3)
Case
PD LD
(4) (1)
ML720J16S
φ 5.6
+0
-0.03
φ 4.3
Top View
(3)
(1) (2)
(4)
φ 3.75±0.1
1±0.1
(Dimension:mm)
(0.25)
(4)
PD
(3)
Case
LD
Emitting Facet
Reference Plane
φ 2.0±0.25
(P.C.D.)
(1)
4-φ 0.45±0.05
(2)
(2) (1)
ML725J16F


Features MITSUBISHI LASER DIODES ML7xx16 SERIES 2.5Gbps InGaAsP DFB LASER DIODE TYPE N AME ML725B16F/ML720J16S/ML725J16F FEAT URES λ/4 phase shifted grating structu re Wide temperature range operation (-2 0ºC to 85ºC ) High side-mode-suppress ion-ratio (typical 45dB) High resonance frequency (typical 11GHz) DESCRIPTION ML7xx16 series are uncooled DFB (Distr ibuted Feedback) laser diodes for 2.5Gb ps transmission emitting light beam at 1310nm. λ/4 shifted grating structure is employed to obtain excellent SMSR pe rformance under 2.5Gbps modulation. Fur thermore, ML7xx16 can operate in the wi de temperature range form -20ºC to 85 C without any temperature control. AP PLICATION ABSOLUTE MAXIMUM RATINGS Symb ol Po IF VRL www.DataSheet4U.com 2.5Gb ps transmission Conditions CW Ratings 6 200 2 2 20 -20 ~+85 -40 ~+100 Unit mW mA V mA V ºC ºC Parameter Output pow er Laser forward current Laser reverse voltage PD forward current PD reverse v oltage Operation temperature Storage temperature IRD VRD Tc Tstg ELEC.
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