ML920L11S LASER DIODES Datasheet

ML920L11S Datasheet, PDF, Equivalent


Part Number

ML920L11S

Description

(ML9xx11) InGaAsP DFB LASER DIODES

Manufacture

Mitsubishi Electric

Total Page 4 Pages
Datasheet
Download ML920L11S Datasheet


ML920L11S
Notice : Some parametric limits are subject to change
MITSUBISHI LASER DIODES
ML9XX11 SERIES
InGaAsP DFB LASER DIODES
TYPE ML925B11F / ML920J11S
NAME ML925AA11F / ML920AA11S
ML925J11F / ML920L11S
DESCRIPTION
ML9XX11series are DFB (Distributed Feedback) laser
diodes emitting light beam around 1550nm.
They are well suited for light source in long
distance digital transmission system.
They are hermetically sealed devices with the photo
diode for optical output monitoring.
APPLICATION
· ~1.25Gbps digital transmission system
FEATURES
· Homogeneous grating (AR/HR facet coating) structure
DFB
· Wide temperature range operation ( -40 to 85ºC )
· Low threshold current (typical 8mA)
· High speed response (typical 0.1nsec)
· φ5.6mm TO-CAN package
· Flat window cap, Ball lens cap, or Aspherical lens cap
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Po Light output power
If Forward current (Laser diode)
VRL Reverse voltage (Laser diode)
VRD Reverse voltage (Photo diode)
IFD Forward current (Photo diode)
Tcwww.DataSheet4U.com
Case temperature
Tstg Storage temperature
Conditions
CW
---
---
---
---
---
---
Ratings
10
150
2
20
2
-40 to +85
-40 to +100
Unit
mW
mA
V
V
mA
ºC
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[ Flat window cap ; ML925B11F / ML920J11S ]
Symbol
Ith
Iop
Vop
η
λp
θ //
θ
SMSR
tr,tf
Im
Id
Ct
Parameter
Threshold current
Operation current
Operating voltage
Slope efficiency
Peak wavelength
Beam divergence angle (parallel)
Beam divergence angle
(perpendicular)
Side mode suppression ratio
Rise and Fall time
Monitoring output current (PD)
Dark current (PD)
Capacitance (PD)
Test conditions
CW
CW, Tc=85ºC
CW, Po=5mW
CW, Po=5mW, Tc=85ºC
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW
CW, Po=5mW
Min.
---
---
---
---
---
0.20
1530
---
Typ.
8
30
25
60
1.1
0.28
1550
25
Max.
15
50
40
80
1.5
---
1570
35
Unit
mA
mA
V
mW/mA
nm
deg.
CW, Po=5mW
--- 35 45 deg.
CW, Po=5mW
Tc= - 40 to +85ºC
35 40 ---
Ib=Ith, 20-80% <*>
--- 0.1 0.2
CW, Po=5mW
0.05 0.2
---
VRD=5V
--- --- 0.1
VRD=5V
--- 10
20
<*> Except influence of the 18mm lead.
dB
ns
mA
µA
pF
MITSUBISHI
ELECTRIC
Dec. 2004

ML920L11S
Notice : Some parametric limits are subject to change
MITSUBISHI LASER DIODES
ML9XX11 SERIES
InGaAsP DFB LASER DIODES
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[Ball lens cap ; ML925AA11F / ML920AA11S ]
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ith Threshold current
CW
CW, Tc=85ºC
--- 8
--- 30
15
50
mA
Iop Operation current
CW, Po=5mW
CW, Po=5mW, Tc=85ºC
---
---
25
60
40
80
mA
Vop Operating voltage
CW, Po=5mW
--- 1.1 1.5
V
η Slope efficiency
CW, Po=5mW
0.20 0.28
--- mW/mA
λp Peak wavelength
CW, Po=5mW
1530 1550 1570
nm
SMSR Side mode suppression ratio
CW, Po=5mW
Tc= - 40 to +85ºC
35 40 --- dB
Pf Fiber coupling power
CW, Po=5mW, SMF
0.5 1.0
--- mW
Df Focul length
CW, Po=5mW, SMF
6.0 6.5 7.0 mm
tr,tf Rise and Fall time
Ib=Ith, 20-80% <*>
--- 0.1 0.2
ns
Im Monitoring output current (PD) CW, Po=5mW
0.05 0.2 --- mA
Id Dark current (PD)
Ct Capacitance (PD)
VRD=5V
VRD=5V
--- --- 0.1 µA
--- 10 20 pF
<*> Except influence of the 18mm lead.
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[ Aspherical lens cap ; ML925J11F / ML920L11S]
Symbol
Ith
Iop
Vop
η
λp
SMSR
Pf
Df
tr,tf
Im
Id
Ct
Parameter
Threshold current
Operation current
Operating voltage
Slope efficiency
Peak wavelength
Side mode suppression ratio
Fiber coupling power
Focul length
Rise and Fall time
Monitoring output current (PD)
Dark current (PD)
Capacitance (PD)
Test conditions
Min. Typ. Max. Unit
CW
CW, Tc=85ºC
--- 8
--- 30
15
50
mA
CW, Po=5mW
CW, Po=5mW, Tc=85ºC
---
---
25
60
40
80
mA
CW, Po=5mW
--- 1.1 1.5
V
CW, Po=5mW
0.20 0.28
--- mW/mA
CW, Po=5mW
1530 1550 1570
nm
CW, Po=5mW
Tc= - 40 to +85ºC
35 40 --- dB
CW, Po=5mW, SMF
1.5 2.0
--- mW
CW, Po=5mW, SMF
6.5 7.5 8.5 mm
Ib=Ith, 20-80% <*>
--- 0.1 0.2
ns
CW, Po=5mW
0.05 0.2 --- mA
VRD=5V
--- --- 0.1 µA
VRD=5V
--- 10 20 pF
<*> Except influence of the 18mm lead.
MITSUBISHI
ELECTRIC
Dec. 2004


Features MITSUBISHI LASER DIODES ML9XX11 SERIES Notice : Some parametric limits are sub ject to change InGaAsP DFB LASER DIODE S TYPE NAME ML925B11F / ML920J11S ML9 25AA11F / ML920AA11S ML925J11F / ML920L 11S APPLICATION · ~1.25Gbps digital tr ansmission system DESCRIPTION ML9XX11s eries are DFB (Distributed Feedback) la ser diodes emitting light beam around 1 550nm. They are well suited for light s ource in long distance digital transmis sion system. They are hermetically seal ed devices with the photo diode for opt ical output monitoring. FEATURES · Ho mogeneous grating (AR/HR facet coating) structure DFB · Wide temperature rang e operation ( -40 to 85ºC ) · Low thr eshold current (typical 8mA) · High sp eed response (typical 0.1nsec) · φ5.6 mm TO-CAN package · Flat window cap, B all lens cap, or Aspherical lens cap A BSOLUTE MAXIMUM RATINGS Symbol Po If VR L VRD IFD www.DataSheet4U.com Tc Tstg P arameter Light output power Forward cur rent (Laser diode) Reverse voltage (Laser diode) Reverse voltage (Photo .
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