RA07H3340M MOBILE RADIO Datasheet

RA07H3340M Datasheet, PDF, Equivalent


Part Number

RA07H3340M

Description

RF MOSFET MODULE 330-400MHz 7W 12.5V PORTABLE/ MOBILE RADIO

Manufacture

Mitsubishi Electric

Total Page 9 Pages
Datasheet
Download RA07H3340M Datasheet


RA07H3340M
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA07H3340M
330-400MHz 7W 12.5V PORTABLE/ MOBILE RADIO
DESCRIPTION
The RA07H3340M is a 7-watt RF MOSFET Amplifier Module
for 12.5-volt portable/ mobile radios that operate in the 330- to
400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW
ηT>40% @ Pout=7W (VGG control), VDD=12.5V, Pin=20mW
• Broadband Frequency Range: 330-400MHz
www.DataSheet4U.com
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
ORDERING INFORMATION:
ORDER NUMBER
RA07H3340M-E01
RA07H3340M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA 07H3340M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002

RA07H3340M
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless oth erwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG<3.5 V
VGG Gate Voltage
VDD<12.5V, Pin=0mW
Pin Input Power
Pout Output Power
f=330-400MHz,
ZG=ZL=50
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
MITSUBISHI RF POWER MODULE
RA07H3340M
RATING
13.2
4
30
10
-30 to +90
-40 to +110
UNIT
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX
f Frequency Range
330 400
Pout Output Power
ηT Total Efficiency
2fo 2nd Harmonic
ρin Input VSWR
IGG Gate Current
— Stability
VDD=12.5V,VGG=3.5V, Pin=20mW
Pout=7W (VGG control),
VDD=12.5V,
Pin=20mW
VDD=7.2-15V, Pin=10-30mW, Pout<8W (VGG control),
Load VSWR=4:1
7
40
-25
4:1
1
No parasitic oscillation
— Load VSWR Tolerance VDD=13.2V, Pin=20mW, Pout=7.0W (VGG control),
Load VSWR=20:1
No degradation or
destroy
UNIT
MHz
W
%
dBc
mA
All parameters, conditions, ratings, and limits are subject to change without notice.
RA 07H3340M
MITSUBISHI ELECTRIC
2/9
23 Dec 2002


Features MITSUBISHI RF MOSFET MODULE ELECTROSTATI C SENSITIVE DEVICE OBSERVE HANDLING PRE CAUTIONS RA07H3340M BLOCK DIAGRAM 2 3 330-400MHz 7W 12.5V PORTABLE/ MOBILE R ADIO DESCRIPTION The RA07H3340M is a 7 -watt RF MOSFET Amplifier Module for 12 .5-volt portable/ mobile radios that op erate in the 330- to 400-MHz range. The battery can be connected directly to t he drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The outp ut power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases subst antially. The nominal output power beco mes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gat e current is 1 mA. This module is desig ned for non-linear FM modulation, but m ay also be used for linear modulation b y setting the drain quiescent current with the gate voltage and.
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