RA07N3340M RoHS Compliance Datasheet

RA07N3340M Datasheet, PDF, Equivalent


Part Number

RA07N3340M

Description

RoHS Compliance

Manufacture

Mitsubishi Electric

Total Page 8 Pages
Datasheet
Download RA07N3340M Datasheet


RA07N3340M
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA07N3340M
RoHS Compliance , 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO
DESCRIPTION
The RA07N3340M is a 7.5-watt RF MOSFET Amplifier
Module for 9.6-volt portable radios that operate in the 330- to
400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power
with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=9.6V, VGG=0V)
• Pout>7.5W @ VDD=9.6V, VGG=3.5V, Pin=20mW
ηT>43% @ Pout=7W (VGG control), VDD=9.6V, Pin=20mW
• Broadband Frequency Range: 330-400MHz
www.DataSheet4U.coLm ow-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H46S
RoHS COMPLIANCE
• RA07N3340M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever ,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA07N3340M-101
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA07N3340M
MITSUBISHI ELECTRIC
1/8
24 Jan 2006

RA07N3340M
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA07N3340M
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
VDD Drain Voltage
VGG=0V, Pin=0W
VDD Drain Voltage
VGG<3.5V
VGG Gate Voltage
VDD<9.6V, Pin<20mW
Pin Input Power
Pout Output Power
f=330-400MHz,
ZG=ZL=50
Tcase(OP) Operation Case Temperature Range
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
16
13.2
4
30
10
-30 to +90
-40 to +110
V
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
f Frequency Range
330 400 MHz
Pout Output Power
ηT Total Efficiency
2fo 2nd Harmonic
ρin Input VSWR
IGG Gate Current
— Stability
VDD=9.6V,VGG=3.5V, Pin=20mW
Pout=7W (VGG control),
VDD=9.6V,
Pin=20mW
VDD=4.8-13.2V, Pin=10-30mW, Pout<8W (VGG control),
Load VSWR=4:1
7.5
43
-25
4:1
1
No parasitic oscillation
W
%
dBc
mA
Load VSWR Tolerance
VDD=13.2V, Pin=20mW, Pout=7.5W (VGG control),
Load VSWR=20:1
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
RA07N3340M
MITSUBISHI ELECTRIC
2/8
24 Jan 2006


Features MITSUBISHI RF MOSFET MODULE ELECTROSTATI C SENSITIVE DEVICE OBSERVE HANDLING PRE CAUTIONS RA07N3340M BLOCK DIAGRAM 2 3 RoHS Compliance , 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO DESCR IPTION The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt po rtable radios that operate in the 330- to 400-MHz range. The battery can be co nnected directly to the drain of the en hancement-mode MOSFET transistors. With out the gate voltage (VGG=0V), only a s mall leakage current flows into the dra in and the RF input signal attenuates u p to 60 dB. The output power and drain current increase as the gate voltage in creases. With a gate voltage around 2.5 V (minimum), output power and drain cur rent increases substantially. The nomin al output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3 .5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with .
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