STT165 Thyristor Modules Datasheet

STT165 Datasheet, PDF, Equivalent


Part Number

STT165

Description

Thyristor Modules

Manufacture

Sirectifier

Total Page 4 Pages
Datasheet
Download STT165 Datasheet


STT165
STT165
Thyristor-Thyristor Modules
Type
STT165GK08
STT165GK12
STT165GK14
STT165GK16
STT165GK18
STT165GK20
STT165GK22
VRSM
VDSM
V
900
1300
1500
1700
1900
2100
2300
VRRM
VDRM
V
800
1200
1400
1600
1800
2000
2200
Dimensions in mm (1mm=0.0394")
Symbol
Test Conditions
I , ITRMS FRMS TVJ=TVJM
I , ITAVM FAVM TC=85oC; 180o sine
TVJ=45oC
ITSM, IFSM
VR=0
TVJ=TVJM
VR=0
i dtwww.DataSheet4U.com 2
TVJ=45oC
VR=0
TVJ=TVJM
VR=0
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
(di/dt)cr
TVJ=TVJM
f=50Hz, tp=200us
VD=2/3VDRM
IG=0.5A
diG/dt=0.5A/us
repetitive, IT=500A
non repetitive, IT=ITAVM
(dv/dt)cr
TVJ=TVJM;
VDR=2/3VDRM
RGK= ; method 1 (linear voltage rise)
PGM
TVJ=TVJM
IT=ITAVM
tp=30us
tp=500us
PGAV
VRGM
TVJ
TVJM
Tstg
VISOL
50/60Hz, RMS
IISOL<_1mA
t=1min
t=1s
Md
Mounting torque (M6)
Terminal connection torque (M6)
Weight Typical including screws
Maximum Ratings
300
165
6000
6400
5250
5600
180000
170000
137000
128000
150
500
1000
120
60
8
10
-40...+125
125
-40...+125
3000
3600
2.25-2.75/20-25
4.5-5.5/40-48
125
Unit
A
A
A2s
A/us
V/us
W
W
V
oC
V~
Nm/lb.in.
g

STT165
STT165
Thyristor-Thyristor Modules
Symbol
Test Conditions
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM
VT, VF IT, IF=300A; TVJ=25oC
VTO For power-loss calculations only (TVJ=TVJM)
rT
VGT VD=6V;
IGT VD=6V;
TVJ=25oC
TVJ=-40oC
TVJ=25oC
TVJ=-40oC
VGD TVJ=TVJM;
VD=2/3VDRM
IGD TVJ=TVJM;
VD=2/3VDRM
IL
TVJ=25oC; tp=30us; VD=6V
IG=0.45A; diG/dt=0.45A/us
IH TVJ=25oC; VD=6V; RGK=
tgd
TVJ=25oC; VD=1/2VDRM
IG=0.5A; diG/dt=0.5A/us
tq
TVJ=TVJM; IT=160A; tp=200us; -di/dt=10A/us
VR=100V; dv/dt=20V/us; VD=2/3VDRM
QS TVJ=TVJM; IT, IF=300A; -di/dt=50A/us
IRM
per thyristor/diode; DC current
RthJC per module
per thyristor/diode; DC current
RthJK per module
dS Creeping distance on surface
dA Creepage distance in air
a Maximum allowable acceleration
Characteristic Values
40
1.36
0.8
1.6
2
2.6
150
200
0.25
10
Unit
mA
V
V
m
V
mA
V
mA
200 mA
150 mA
2 us
typ. 150 us
550
235
0.155
0.0775
0.225
0.1125
12.7
9.6
50
uC
A
K/W
K/W
mm
mm
m/s2
FEATURES
* International standard package
* Copper base plate
* Planar passivated chips
* Isolation voltage 3600 V~
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits


Features STT165 Thyristor-Thyristor Modules Dimen sions in mm (1mm=0.0394") Type VRSM VDS M V 900 1300 1500 1700 1900 2100 2300 V RRM VDRM V 800 1200 1400 1600 1800 2000 2200 STT165GK08 STT165GK12 STT165GK14 STT165GK16 STT165GK18 STT165GK20 STT16 5GK22 Symbol ITRMS, IFRMS TVJ=TVJM ITA VM, IFAVM TC=85oC; 180o sine TVJ=45oC V R=0 TVJ=TVJM VR=0 TVJ=45oC VR=0 TVJ=TVJ M VR=0 TVJ=TVJM f=50Hz, tp=200us VD=2/3 VDRM IG=0.5A diG/dt=0.5A/us Test Condi tions Maximum Ratings 300 165 Unit A ITSM, IFSM t=10ms (50Hz), sine t=8.3m s (60Hz), sine t=10ms(50Hz), sine t=8.3 ms(60Hz), sine t=10ms (50Hz), sine t=8. 3ms (60Hz), sine t=10ms(50Hz), sine t=8 .3ms(60Hz), sine repetitive, IT=500A 6 000 6400 5250 5600 180000 170000 137000 128000 150 A www.DataSheet4U.com i dt 2 A2s (di/dt)cr A/us non repetit ive, IT=ITAVM 500 1000 120 60 8 10 -40. ..+125 125 -40...+125 V/us W W V o (dv /dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISO L Md Weight TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) TVJ=TVJM IT=ITAVM tp=30us tp=.
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