Silicon Phototransistors. CLT130W Datasheet


CLT130W Phototransistors. Datasheet pdf. Equivalent


CLT130W


(CLT130W - CLT132W) NPN Silicon Phototransistors
CLT130W, CLT131W, CLT132W
NPN Silicon Phototransistors
The CLT130W, CLT131W and CLT132W are exact replacements for obsolete part numbers CLT2020, CLT2030 and CLT2035.
0.210 (5.33) 0.190 (4.83) 0.500 (12.7) min 0.190 (4.83) 0.176 (4.47)

®

Clairex
0.215 (5.46) 0.205 (5.21)



Technologies, Inc.
July, 2001

COLLECTOR 0.160 (4.06) 0.150 (3.81) BASE EMITTER 0.100 (2.54) dia 0.010 (0.25) max 0.025 (0.64) max 0.019 (0.48) 0.016 (0.41) 0.147 (3.73) 0.137 (3.48)

ALL DIMENSIONS ARE IN INCHESCase (MILLIMETERS) 18

Collector electrically connected to case.

www.DataSheet4U.com

features absolute maximum ratings (TA = 25°C unless otherwise stated) storage temperature ...................................................................... -65°C to +200°C • high sensitivity operating temperature.................................................................... -65°C to +150°C • ± 35° acceptance angle (1) • TO-18 hermetically sealed package lead soldering temperature ......................................................................... 260°C collector-emitter voltage..................................................................................... 30V • transistor base is bonded (2) continuous collector current ......................................................................... 50mA • RoHS compliant continuous power dissipation(3) ................................................


CLT130W
CLT130W, CLT131W, CLT132W
NPN Silicon Phototransistors
The CLT130W, CLT131W and CLT132W are
exact replacements for obsolete part numbers
CLT2020, CLT2030 and CLT2035.
0.190 (4.83)
0.176 (4.47)
0.210 (5.33)
0.190 (4.83)
0.500 (12.7) min
® Clairex
Technologies, Inc.
July, 2001
0.215 (5.46)
0.205 (5.21)
0.160 (4.06)
0.150 (3.81)
0.010 (0.25)
max
0.025 (0.64)
max
0.019 (0.48)
0.016 (0.41)
COLLECTOR
BASE
EMITTER
0.100 (2.54) dia
0.147 (3.73)
0.137 (3.48)
ALL DIMENSIONS ARE IN INCHESC(MasILeLI1M8ETERS)
Collector electrically
connected to case.
features
absolute maximum ratings (TA = 25°C unless otherwise stated)
high sensitivity
storage temperature ...................................................................... -65°C to +200°C
± 35° acceptance angle
TO-18 hermetically sealed package
operating temperature.................................................................... -65°C to +150°C
lead soldering temperature(1) ......................................................................... 260°C
transistor base is bonded
RoHS compliant
collector-emitter voltage..................................................................................... 30V
continuous collector current(2) ......................................................................... 50mA
continuous power dissipation(3) .................................................................... 250mW
description
The CLT130W, CLT131W and
notes:
CLT132W are silicon NPN planar
1. 0.06” (1.5mm) from the header for 5 seconds maximum.
epitaxial phototransistors mounted in 2. 200mA when pulsed at 1.0ms, 10% duty cycle.
www.DataSheet4U.com TO-18 flat window packages. The
3. Derate linearly 1.6mW/°C from 25°C free air temperature to TA = +150°C.
wide acceptance angle provided by
the flat window enables even
reception over a relatively large area.
For additional information, call
Clairex
electrical characteristics (TA = 25°C unless otherwise noted)
symbol parameter
min typ max units test conditions
Light current(4)
IL
CLT130W
CLT131W
CLT132W
0.4
1.0
2.5
-
-
-
- mA
- mA
- mA
ICEO Collector dark current
- 25 nA
V(BR)CEO Collector-emitter breakdown
30 - - V
V(BR)CBO Collector-base breakdown
5.0 - - V
V(BR)ECO Emitter-collector breakdown
5.0 - - V
VCE(sat)
tr, tf
Collector-emitter saturation voltage
Output rise and fall time(5)
- - 0.30 V
- 3.0 -
µs
θHP Total angle at half sensitivity points
- 70 - deg.
notes: 4. Radiation source for all light current testing is a 850nm IRED.
5. The radiation source is a pulsed gallium arsenide IRED with rise and fall times of 0.3µs.
VCE=5V, Ee=5.0mW/cm2
VCE=5V, Ee=5.0mW/cm2
VCE=5V, Ee=5.0mW/cm2
VCE=10V, Ee=0
IC=100µA, Ee=0
IC=100µA, Ee=0
IE=100µA, Ee=0
IC=0.4mA, Ee=5.0mW/cm2
VCC=5V, RL=1K
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/22/06
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com




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