Power Modules. RA30H3340M Datasheet


RA30H3340M Modules. Datasheet pdf. Equivalent


RA30H3340M


Silicon RF Power Modules
MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS

RA30H3340M
330-400MHz 30W 12.5V MOBILE RADIO BLOCK DIAGRAM

DESCRIPTION The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 330-400MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V www.DataSheet4U.com • 66 x 21 x 9.8 mm • Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output po...



RA30H3340M
<Silicon RF Power Modules >
RA30H3340M
RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for
12.5-volt mobile radios that operate in the 330- to 400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate voltage
(VGG=0V), only a small leakage current flows into the drain and the RF
input signal attenuates up to 60 dB. The output power and drain current
increase as the gate voltage increases. With a gate voltage around
4.0V (minimum), output power and drain current increases substantially.
The nominal output power becomes available at 4.5V (typical) and 5V
(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be
used for linear modulation by setting the drain quiescent current with
the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>30W, T>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• 66 x 21 x 9.8 mm
• Linear operation is possible by setting the quiescent drain current with
the gate voltage and controlling the output power with the input power
BLOCK DIAGRAM
2
1
3
4
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H2S
RoHS COMPLIANCE
• RA30H3340M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent
tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA30H3340M-101
SUPPLY FORM
Antistatic tray,
10 modules/tray
Publication Date : Jul.2011
1

RA30H3340M
<Silicon RF Power Modules >
RA30H3340M
RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
MAXIMUM RATINGS (Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER
VDD
VGG
Pin
Pout
Tcase(OP)
Tstg
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
CONDITIONS
VGG<5V
VDD<12.5V, Pin=0mW
f=330-400MHz,
ZG=ZL=50
RATING
17
6
100
45
-30 to +110
-40 to +110
UNIT
V
V
mW
W
°C
°C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
f Frequency Range
Pout Output Power
T Total Efficiency
2fo 2nd Harmonic
in Input VSWR
IGG Gate Current
— Stability
— Load VSWR Tolerance
CONDITIONS
VDD=12.5V,
VGG=5V,
Pin=50mW
VDD=10.0-15.2V, Pin=25-70mW,
Pout<40W (VGG control), Load VSWR=3:1
VDD=15.2V, Pin=50mW, Pout=30W (VGG control),
Load VSWR=20:1
MIN TYP MAX UNIT
330 - 400 MHz
30 - - W
40 - - %
- - -25 dBc
- - 3:1 —
- 1 - mA
No parasitic oscillation —
No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
Publication Date : Jul.2011
2




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)