RoHS Compliance. RA45H8994M1 Datasheet


RA45H8994M1 Compliance. Datasheet pdf. Equivalent


RA45H8994M1


RoHS Compliance
MITSUBISHI RF MOSFET MODULE
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS

RA45H8994M1
BLOCK DIAGRAM
2 3

RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO

DESCRIPTION The RA45H8994M1 is a 45-watt RF MOSFET Amplifier Module for 12.8-volt mobile radios that operate in the 896- to 941-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is supplied to the gate voltage 1, the output power and the drain current increase as the gate voltage 2 increases. The output power and the drain current increase substantially with the gate voltage 2 around 0V (minimum) under the condition when the gate voltage 1 is kept in 3.4V. The nominal output power becomes available at the state that VGG2 is 4V (typical) and 5V (maximum). At this point, VGG1 has to be kept in 3.4V. At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltages and controlling the output power with the input power. FEATURES • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.8V, VGG1=...



RA45H8994M1
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA45H8994M1
RoHS Compliance, 896-941MHz 45W 12.8V, 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA45H8994M1 is a 45-watt RF MOSFET Amplifier
Module for 12.8-volt mobile radios that operate in the 896- to
941-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage 1 and the gate voltage 2(VGG1=VGG2=0V), only a small
leakage current flows into the drain and the nominal output
signal (Pout=45W) attenuates up to 60 dB. When fixed i.e. 3.4V, is
supplied to the gate voltage 1, the output power and the drain
current increase as the gate voltage 2 increases. The output
power and the drain current increase substantially with the gate
voltage 2 around 0V (minimum) under the condition when the
gate voltage 1 is kept in 3.4V. The nominal output power
becomes available at the state that VGG2 is 4V (typical) and 5V
(maximum). At this point, VGG1 has to be kept in 3.4V.
At VGG1=3.4V & VGG2=5V, the typical gate currents are 0.4mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltages and controlling the output power
with the input power.
BLOCK DIAGRAM
2
3
14
5
1 RF Input added Gate Voltage 1(Pin&VGG1)
2 Gate Voltage 2(VGG2), Power Control
3 Drain Voltage (VDD), Battery
FEATURES
4 RF Output (Pout)
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.8V, VGG1=VGG2=0V)
www.DataSheet4U.com
• P >45W,out
ηT>33%
@VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW
• Broadband Frequency Range: 896-941MHz
5 RF Ground (Case)
PACKAGE CODE: H2M
• Metal cap structure that makes the improvements of RF
radiation simple
• Low-Power Control Current IGG1+IGG2=0.4mA(typ) @ VGG1=3.4V, VGG2=5V
• Module Size: 67 x 18 x 9.9 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltages and controlling the output power
with the input power.
RoHS COMPLIANCE
• RA45H8994M1 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever, it is applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER
RA45H8994M1-101
RA45H8994M1
SUPPLY FORM
Antistatic tray,
10 modules/tray
MITSUBISHI ELECTRIC
1/9
20th Dec 2006

RA45H8994M1
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA45H8994M1
MAXIMUM RATINGS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
VDD Drain Voltage
VGG1=3.4V ± 7%, VGG2<5V, Pin=0W
VGG1 Gate Voltage 1
VGG2<5V, VDD<12.8V, Pin=50mW
VGG2 Gate Voltage 2
VGG1=3.4V ± 7%, VDD<12.8V, Pin=50mW
Pin
Pout
Tcase(OP)
Input Power
Output Power
Operation Case Temperature Range
f=896-941MHz,
VGG1=3.4V ± 7%, VGG2<5V
Tstg Storage Temperature Range
The above parameters are independently guaranteed.
RATING
17
4.5
6
100
60
-30 to +100
-40 to +110
UNIT
V
V
V
mW
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tcase=+25°C, ZG=ZL=50, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN TYP MAX UNIT
F
Pout 1
ηT
2fo
3fo
ρin
IDD
Pout 2
Frequency Range
Output Power 1
Total Efficiency
2nd Harmonic
3nd Harmonic
Input VSWR
Leakage Current
Output Power 2*
Stability
Load VSWR Tolerance
VDD=12.8V, VGG1=3.4V, VGG2=5V, Pin=50mW
VDD=12.8V
VGG1=3.4V
VGG2=5V
Pin=50mW
VDD=17V, VGG1=VGG2=0V, Pin=0W
VDD=15.2V, VGG1=3.4V, VGG2=1V, Pin=4dBm
VDD=10.0-15.2V, Pin=1-100mW,
1.5<Pout <50W (VGG2 control, VGG1=3.4V),
Load VSWR=3:1
VDD=15.2V, Pin=50mW,
Pout=45W (VGG2 control, VGG1=3.4V),
Load VSWR=20:1
896 941 MHz
45 W
33 %
-40 dBc
-40 dBc
3:1 —
1 mA
2W
No parasitic oscillation —
No degradation or destroy —
*: This is guaranteed as design value.
All parameters, conditions, ratings, and limits are subject to change without notice.
RA45H8994M1
MITSUBISHI ELECTRIC
2/9
20th Dec 2006




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)