RD00HVS1 RoHS Compliance Datasheet

RD00HVS1 Datasheet, PDF, Equivalent


Part Number

RD00HVS1

Description

RoHS Compliance

Manufacture

Mitsubishi Electric

Total Page 6 Pages
Datasheet
Download RD00HVS1 Datasheet


RD00HVS1
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
DESCRIPTION
RD00HVS1 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
FEATURES
High power gain
Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz
APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
OUTLINE DRAWING
TYPE NAME
4.4+/-0.1
1.6+/-0.1
1.5+/-0.1
LOT No.
123
1.5+/-0.1 1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
0.1 MAX
0.4
+0.03
-0.05
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RoHS COMPLIANT
RD00HVS1-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
www.DataSheet4U.com
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
VDSS Drain to source voltage Vgs=0V
VGSS Gate to source voltage Vds=0V
Pch Channel dissipation Tc=25°C
Pin Input Power
Zg=Zl=50
ID Drain Current
-
Tch Channel Temperature
-
Tstg Storage temperature
-
Rth j-c Thermal resistance
Junction to case
Note : Above parameters are guaranteed independently.
RATINGS
30
+/-10
3.1
20
200
150
-40 to +125
40
UNIT
V
V
W
mW
mA
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS
(Tc=25deg.C , UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
CONDITIONS
IDSS
IGSS
Vth
Pout
ηD
Zero gate voltage drain current VDS=17V, VGS=0V
Gate to source leak current VGS=10V, VDS=0V
Gate threshold Voltage
VDS=12V, IDS=1mA
Output power
VDD=12.5V, Pin=5mW,
Drain efficiency
f=175MHz,Idq=50mA
Note : Above parameters , ratings , limits and conditions are subject to change.
RD00HVS1
MITSUBISHI ELECTRIC
1/6
LIMITS
MIN TYP MAX.
- - 25
- -1
123
0.5 0.8
-
50 60
-
UNIT
uA
uA
V
W
%
10 Jan 2006

RD00HVS1
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD00HVS1
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
4 AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
3
On PCB(*1) with Heat-sink
2
1
On PCB(*1)
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vgs-Ids CHARACTERISTICS
1.0
Ta=+25°C
Vds=10V
0.8
0.6
0.4
0.2
0.0
012345
Vgs(V)
Vds-Ids CHARACTERISTICS
1.5
Ta=+25°C
1
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
0.5
Vgs=4V
Vgs=3V
0
0 2 4 6 8 10
Vds(V)
Vds VS. Ciss CHARACTERISTICS
20
18 Ta=+25°C
16 f=1MHz
14
12
10
8
6
4
2
0
05
10
Vds(V)
15
20
Vds VS. Coss CHARACTERISTICS
20
18 Ta=+25°C
16 f=1MHz
14
12
10
8
6
4
2
0
0 5 10 15 20
Vds(V)
Vds VS. Crss CHARACTERISTICS
4
Ta=+25°C
f=1MHz
3
2
1
0
0 5 10 15 20
Vds(V)
RD00HVS1
MITSUBISHI ELECTRIC
2/6
10 Jan 2006


Features MITSUBISHI RF POWER MOS FET ELECTROSTATI C SENSITIVE DEVICE OBSERVE HANDLING PRE CAUTIONS RD00HVS1 4.4+/-0.1 1.6+/-0.1 LOT No. 3.9+/-0.3 RoHS Compliance, Sil icon MOSFET Power Transistor 175MHz,0.5 W DESCRIPTION RD00HVS1 is a MOS FET typ e transistor specifically designed for VHF/UHF RF amplifiers applications. TYP E NAME 0.8 MIN 2.5+/-0.1 OUTLINE DRAWI NG 1.5+/-0.1 FEATURES High power gain Pout>0.5W, Gp>20dB @Vdd=12.5V,f=175MHz 1 2 1.5+/-0.1 3 1.5+/-0.1 0.4 +0.03 -0.05 Terminal No. 1 : GATE 2 : SOURSE 3 : DRAIN UNIT : mm APPLICATION For o utput stage of high power amplifiers in VHF/UHF Band mobile radio sets. 0.4+/ -0.07 0.5+/-0.07 0.4+/-0.07 0.1 MAX Ro HS COMPLIANT RD00HVS1-101,T113 is a RoH S compliant products. This product incl ude the lead in high melting temperatur e type solders. How ever,it applicable to the following exceptions of RoHS Dir ections. 1.Lead in high melting tempera ture type solders(i.e.tin-lead solder a lloys containing more than85% lead.) www.DataSheet4U.com ABSO.
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