D2022UK RF FET Datasheet

D2022UK Datasheet, PDF, Equivalent


Part Number

D2022UK

Description

GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET

Manufacture

Sames

Total Page 2 Pages
Datasheet
Download D2022UK Datasheet


D2022UK
TetraFET
D2022UK
MECHANICAL DATA
AD
B
H
23
1
54
F
C
G
E
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
45W – 28V – 500MHz
PUSH–PULL
I
NM
O
PIN 1
www.DataShePetI4NU.c3om
PIN 5
DQ
SOURCE (COMMON) PIN 2
DRAIN 2
PIN 4
GATE 1
JK
DRAIN 1
GATE 2
DIM mm
A 16.38
B 1.52
C 45°
D 6.35
E 3.30
F 14.22
G 1.27 x 45°
H 1.52
I 6.35
J 0.13
K 2.16
M 1.52
N 5.08
O 18.90
Tol.
0.26
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.02
0.13
0.13
MAX
0.13
Inches
0.645
0.060
45°
0.250
0.130
0.560
0.05 x 45°
0.060
0.250
0.005
0.085
0.060
0.200
0.744
Tol.
0.010
0.005
0.005
0.005
0.005
0.005
0.005
0.005
0.001
0.005
0.005
MAX
0.005
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW Crss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
VHF/UHF COMMUNICATIONS
from 50 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
125W
BVDSS
Drain – Source Breakdown Voltage *
65V
BVGSS
Gate – Source Breakdown Voltage *
±20V
ID(sat)
Drain Current *
5A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3827
Issue 1

D2022UK
D2022UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BVDSS
Drain–Source Breakdown
Voltage
PER SIDE
VGS = 0
ID = 10mA
65
IDSS
Zero Gate Voltage
Drain Current
VDS = 28V
VGS = 0
IGSS
VGS(th)
gfs
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
VGS = 20V
ID = 10mA
VDS = 10V
VDS = 0
VDS = VGS
ID = 1A
1
0.9
GPS
η
VSWR
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
TOTAL DEVICE
PO = 45W
VDS = 28V
IDQ = 0.5A
f = 500MHz
13
40
20:1
Ciss
Coss
Crss
PER SIDE
Input Capacitance
VDS = 28V VGS = –5V f = 1MHz
Output Capacitance
VDS = 28V VGS = 0 f = 1MHz
Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz
* Pulse Test: Pulse Duration = 300 μs , Duty Cycle 2%
Typ.
Max. Unit
V
1 mA
1 μA
7V
S
dB
%
60 pF
30 pF
2.5 pF
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case
Thermal Resistance Junction – Case
Max. 1.4°C / W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3827
Issue 1


Features TetraFET D2022UK METAL GATE RF SILICON FET MECHANICAL DATA B H C 2 3 1 A D E 5 4 F G GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 45W – 28V – 500 MHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN J K I N M O • SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW Crss • SIMPLE BIAS CIRCUIT S • LOW NOISE DQ www.DataSheet4U.com PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PI N 2 DRAIN 2 PIN 4 GATE 1 DRAIN 1 GATE 2 DIM mm A 16.38 B 1.52 C 45° D 6.35 E 3.30 F 14.22 G 1.27 x 45° H 1.52 I 6 .35 J 0.13 K 2.16 M 1.52 N 5.08 O 18.90 Tol. 0.26 0.13 5° 0.13 0.13 0.13 0.1 3 0.13 0.13 0.02 0.13 0.13 MAX 0.13 In ches 0.645 0.060 45° 0.250 0.130 0.560 0.05 x 45° 0.060 0.250 0.005 0.085 0. 060 0.200 0.744 Tol. 0.010 0.005 5° 0 .005 0.005 0.005 0.005 0.005 0.005 0.00 1 0.005 0.005 MAX 0.005 • HIGH GAIN – 13 dB MINIMUM APPLICATIONS • VHF /UHF COMMUNICATIONS from 50 MHz to 1 GH z ABSOLUTE MAXIMUM RATINGS (Tcase = 25 °C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Power Di.
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