GI01N60 POWER MOSFET Datasheet

GI01N60 Datasheet, PDF, Equivalent


Part Number

GI01N60

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

GTM

Total Page 5 Pages
Datasheet
Download GI01N60 Datasheet


GI01N60
Pb Free Plating Product
ISSUED DATE :2004/06/01
REVISED DATE :2005/01/28B
GI01N60
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
600V
8
1.6A
Description
The GI01N60 provide the designer with the best combination of fast switching.
The through-hole version (TO-251) is available for low-profile applications and suited for AC/DC converters.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
TO-251
www.DataSheet4U.com
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current , VGS@10V
VGS
ID @TC=25
Continuous Drain Current , VGS@10V
Pulsed Drain Current1,
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
EAS
Avalanche Current
IAR
Repetitive Avalanche Energy
EAR
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
600
20
1.6
1
6
39
0.31
13
1.6
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
3.2
110
Unit
/W
/W
GI01N60
Page: 1/5

GI01N60
ISSUED DATE :2004/06/01
REVISED DATE :2005/01/28B
Electrical Characteristics(Tj = 25 Unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS 600
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.6
- V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
2.0
-
4.0
V VDS=VGS, ID=250uA
Forward Transconductance
gfs
- 0.8 -
S VDS=50V, ID=0.8A
Gate-Source Leakage Current
IGSS - - 100 nA VGS= 20V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 100 uA VDS=600V, VGS=0
- 500 uA VDS=480V, VGS=0
Static Drain-Source On-Resistance
Total Gate Charge3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Timewww.DataSheet4U.com
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
7.2 8.0
7.7 -
1.5 -
2.6 -
8-
5-
14 -
7-
286 -
25 -
5-
VGS=10V, ID=0.8A
ID=1.6A
nC VDS=480V
VGS=10V
VDD=300V
ID=1.6A
ns VGS=10V
RG=10
RD=187.5
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.5
1.6
6
Unit Test Conditions
V IS=1.6A, VGS=0V, Tj=25
A VD= VG=0V, VS=1.5V
A
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=50V, L=10mH, RG=25 , IAS=1.6A.
3. Pulse width 300us, duty cycle 2%.
GI01N60
Page: 2/5


Features Pb Free Plating Product ISSUED DATE :200 4/06/01 REVISED DATE :2005/01/28B GI01 N60 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60 0V 8 1.6A The GI01N60 provide the desi gner with the best combination of fast switching. The through-hole version (TO -251) is available for low-profile appl ications and suited for AC/DC converter s. *Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching Features Package Dim ensions TO-251 REF. www.DataSheet4U.co m A B C D E F Millimeter Min. Max. 6. 40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2 .30 REF. 0.60 0.90 REF. G H J K L M M illimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.8 0 Absolute Maximum Ratings Parameter D rain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Con tinuous Drain Current , VGS@10V Pulsed Drain Current 1, Symbol VDS VGS ID @TC =25 ID @TC=100 IDM PD @TC=25 2 Ratings 600 20 1.6 1 6 39 0.31 13 1.6 0.5 -55 ~ +150 Unit V V A A A W.
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