Transistors. 2SD2705S Datasheet

2SD2705S Transistors. Datasheet pdf. Equivalent

Part 2SD2705S
Description Transistors
Feature 2SD2704K / 2SD2705S Transistors For Muting (20V, 0.3A) 2SD2704K / 2SD2705S zFeatures 1) High DC cur.
Manufacture Rohm
Datasheet
Download 2SD2705S Datasheet



2SD2705S
Transistors
For Muting (20V, 0.3A)
2SD2704K / 2SD2705S
2SD2704K / 2SD2705S
zFeatures
1) High DC current gain.
hFE = 820 to 2700
2) High emitter-base voltage.
VEBO = 25V (Min.)
3) Low Ron
Ron= 0.7(Typ.)
zStructure
Epitaxial planar type
NPN silicon transistor
zExternal dimensions (Unit : mm)
2SD2704K
2.9±0.2
1.9±0.2
0.95 0.95
(1) (2)
1.1+−00..21
0.8±0.1
0 to 0.1
ROHM : SMT3
EIAJ : SC-59
(3)
0.4
+0.1
0.05
0.15−+00..016
All terminals have same dimensions
Abbreviated symbol: XL
(1) Emitter
(2) Base
(3) Collector
2SD2705S
4±0.2
2±0.2
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zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector power 2SD2704K
dissipation
2SD2705S
PC
Junction temperature
Tj
Storage temperature
Tstg
Limits
50
20
25
0.3
0.2
0.3
150
55 to +150
ROHM : SPT
EIAJ : SC-72
Denotes hFE
Unit
V
V
V
A
W
°C
°C
0.45+−00..1055
2.5+−00..41
5
(1) (2) (3)
0.5
0.45
+0.15
0.05
(1) Emitter
(2) Collector
(3) Base
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2SD2705S
Transistors
2SD2704K / 2SD2705S
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
BVCBO 50
Collector-emitter breakdown voltage BVCEO 20
Emitter-base breakdown voltage
BVEBO 25
Collector cutoff current
ICBO
Emitter cutoff current
Collector-emitter saturation voltage
IEBO
VCE(sat)
DC current transfer ratio
Transition frequency
Output capacitance
hFE
fT
Cob
820
Output On-resistance
Measured using pulse current
Ron
Typ.
50
35
3.9
0.7
Max.
0.1
0.1
100
2700
Unit
V
V
V
µA
µA
mV
MHz
pF
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=50V
VEB=25V
IC/IB=30mA/3mA
VCE=2V, IC=4mA
VCE=6V, IE= −4mA, f=10MHz
VCB=10V, IE=0A, f=1MHz
IB=5mA, Vi=100mV(rms), f=1kHz
zPackaging specifications and hFE
Type
Package
Code
Basic ordering
unit (pieces)
Taping
T146
TP
3000
5000
2SD2704K
2SD2705S
zElectrical characteristic curves
1000
VCE=2V
Ta=125°C
100
25°C
10 40°C
1000
100
10
0.1 0.1
Ta=125°C
25°C
VCE=6V
10000
Ta=125°C
40°C
1000
100
Ta=25°C
Ta= −40°C
VCE=2V
0.1
0 0.2 0.4 0.6 0.8 1 1.2
BASE TO EMITTER VOLTAGE : VBE(ON) (V)
Fig.1 Grounded emitter propagation
characteristics ( Ι )
0.1
0 0.2 0.4 0.6 0.8 1 1.2
BASE TO EMITTER VOLTAGE : VBE(ON) (V)
Fig.2 Grounded emitter propagation
characteristics ( ΙΙ )
10
1 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain
vs. collector current ( )
2/4





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