APM2312
N-Channel Enhancement Mode MOSFET
Features
16V/5A , RDS(ON)=35mΩ(typ.) @ VGS=4.5V
Pin Description
D
3
RDS(ON)=45mΩ(typ.) @ VGS=2.5V RDS(ON)=60mΩ(typ.) @ VGS=1.8V
Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged
G S
1 2
SOT-23 Package
Top View of SOT-23
D
Applications
Power Management in Notebook ...
