Amplifier Module. AP622 Datasheet

AP622 Module. Datasheet pdf. Equivalent

Part AP622
Description UMTS-band 4W HBT Amplifier Module
Feature www.DataSheet4U.com AP622 Product Description The AP622 power amplifier module is a two-stage power.
Manufacture WJ Communication
Datasheet
Download AP622 Datasheet



AP622
AP622www.DataSheet4U.com
UMTS-band 4W HBT Amplifier Module
Product Features
Product Description
Functional Diagram
2.11 – 2.17 GHz
28 dB Gain
-55 dBc ACLR @ +23 dBm Pavg
+35 dBm P1dB
+28 V Supply
The AP622 power amplifier module is a two-stage power
amplifier module that operates over the frequency range of
2110 – 2170 MHz and is housed in a small, RoHS-
compliant, flange-mount package. The multi-stage
amplifier module has a 28 dB gain, P1dB of 35dBm, and
ACLR of –55dBc at +23 dBm output power for WCDMA
applications.
Power Down Mode
RoHS-compliant flange-mount pkg
Applications
WCDMA Power Amplifiers
Repeaters
The AP622 uses a +28V high reliability InGaP/GaAs HBT
process technology and does not require any external
matching components. The amplifier module operates off a
+28V supply; an internal active bias allows the amplifier to
maintain high linearity over temperature. It has the added
feature of a +5V power down control pin. A low-cost
metal housing allows the device to have a low thermal
resistance to ensure long lifetimes. All devices are 100%
RF and DC tested.
123
456
Top View
Pin No.
1
2/4
3/5
6
Case
Function
RF Output
Vcc
Vpd
RF Input
Ground
The AP622 is targeted for use as a driver stage amplifier in
wireless infrastructure where high linearity and high power
is required. This combination makes the device an
excellent candidate for next generation multi-carrier 3G
base stations.
Specifications
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 120 mA
Parameter
Units
Min
Typ
Max
Operational Bandwidth
MHz
2110 - 2170
Output Channel Power
dBm
+23
Power Gain
dB
28
ACLR
dBc -55
Operating Current, Icc
mA
135
Collector Efficiency
%
5
Output P1dB
dBm
+35
Quiescent Current, Icq
mA
120
Vpd V +5
Vcc V +28
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
Rating
-40 to +85 °C
-55 to +150 °C
Ordering Information
Part No.
AP622
Description
PCS-band 4W HBT Amplifier Module
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 1 of 4 March 2007



AP622
AP622www.DataSheet4U.com
UMTS-band 4W HBT Amplifier Module
Evaluation Board Bias Procedure
The following bias procedure is recommended to ensure proper functionality of AP622 in a laboratory environment. The sequencing is not
required in the final system application.
5V GND
28V
28V
Turn-on Sequence:
1. Attach input and output loads onto the evaluation board.
2. Turn on power supply Vcc = +28V.
3. Turn on power supply Vpd = +5V.
4. Turn on RF power.
Turn-off Sequence:
1. Turn off RF power.
2. Turn off power supply Vpd = +5V.
3. Turn off power supply Vcc = +28V.
Notes:
1. Vpd is used as a reference for the internal active bias circuitry. It can be used to turn on/off the amplifier.
Specifications and information are subject to change without notice
WJ Communications, Inc Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com
Page 2 of 4 March 2007





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