Protection Diodes. ESD9C3.3ST5G Datasheet

ESD9C3.3ST5G Diodes. Datasheet pdf. Equivalent

Part ESD9C3.3ST5G
Description ESD Protection Diodes
Feature www.DataSheet4U.com ESD9C3.3ST5G SERIES ESD Protection Diodes In Ultra Small SOD−923 Package The ES.
Manufacture ON Semiconductor
Datasheet
Download ESD9C3.3ST5G Datasheet



ESD9C3.3ST5G
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ESD9C3.3ST5G SERIES
ESD Protection Diodes
In Ultra Small SOD−923 Package
The ESD9C3.3ST5G Series is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage, and
fast response time make these parts ideal for ESD protection on designs
where board space is at a premium. Because of its small size, it is suited
for use in cellular phones, portable devices, digital cameras, power
supplies and many other portable applications.
Specification Features:
Small Body Outline Dimensions:
0.039x 0.024(1.0 mm x 0.60 mm)
Low Body Height: 0.016(0.40 mm) Max
Stand−off Voltage: 3.3 V, 5 V
Low Leakage
Response Time < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
IEC61000−4−2 Level 4 ESD Protection
These are Pb−Free Devices
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL 94 V−0
LEAD FINISH: 100% Matte Sn (Tin)
MOUNTING POSITION: Any
QUALIFIED MAX REFLOW TEMPERATURE: 260°C
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Symbol
Total Power Dissipation on FR−5 Board
(Note 1) @ TA = 25°C
PD
Junction and Storage Temperature
Range
TJ, Tstg
Value
150
−55 to +150
Unit
mW
°C
Lead Solder Temperature − Maximum
(10 Second Duration)
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
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12
PIN 1. CATHODE
2. ANODE
MARKING
DIAGRAM
SOD−923
CASE 514AB
XM
X = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
ESD9CxxST5G SOD−923 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 0
1
Publication Order Number:
ESD9C3.3S/D



ESD9C3.3ST5G
ESD9C3.3ST5G SERIES
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
IF
VF
Ppk
C
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Forward Current
Forward Voltage @ IF
Peak Power Dissipation
Max. Capacitance @VR = 0 and f = 1 MHz
I
IF
VC VBR VRWM
IIRT VF
IPP
Uni−Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA)
Device
Device
Marking
VRWM (V)
Max
IR (mA) @ VRWM
Max
VBR (V) @ IT
(Note 2)
Min
IT
mA
C (pF)
(Note 3)
Typ
ESD9C3.3ST5G R 3.3
1.0
5.0 1.0 12.8
ESD9C5.0ST5G P 5.0
0.5
11.0 1.0
6.0
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. Capacitance at f = 1 MHz, VR = 0 V, TA = 25°C.
V
C (pF)
(Note 3)
Max
13
6.2
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2





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