Effect Transistor. MAPL-000817-015C00 Datasheet

MAPL-000817-015C00 Transistor. Datasheet pdf. Equivalent

Part MAPL-000817-015C00
Description RF Power Field Effect Transistor
Feature www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 1/11/06 Prelim.
Manufacture Tyco Electronics
Total Page 8 Pages
Datasheet
Download MAPL-000817-015C00 Datasheet



MAPL-000817-015C00
RFwww.DataSheet4U.com Power Field Effect Transistor
LDMOS, 800—1700 MHz, 15W, 26V
1/11/06
Preliminary
Features
Designed for broadband commercial
applications up to 1.7GHz
High Gain, High Efficiency and High
Linearity
Typical P1dB performance at 960MHz,
26Vdc, CW
Typical Power Output: 16.5W
Gain: 16.5dB
Efficiency: 50%
10:1 VSWR Ruggedness at 15W,
26Vdc, 960MHz
Package Style
MAPL-000817-015C00
Maximum Ratings
Drain—Source Voltage
Parameter
Gate—Source Voltage
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
TSTG
TJ
Rating
65
+20, -20
31.25
-65 to +150
150
Units
Vdc
Vdc
W
°C
°C
Symbol
RΘJC
Max
4
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packag-
ing MOS devices should be observed.



MAPL-000817-015C00
RF Power LDMOS Transistor, 800-1700 MHz, 15W, 26V
MAPL-000817-015C00
1/11/06
Preliminary
Characteristic
DC CHARACTERISTICS @ 25ºC
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 30 µAdc)
Gate Threshold Voltage
(Vds = 26 Vdc, Id = 100 mA)
Gate Quiescent Voltage
(Vds = 26 Vdc, Id = 100 mA)
Drain-Source On-Voltage
(Vgs = 10 Vdc, Id = 1 A)
RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) (1)
Common Source Amplifier Gain
(VDD = 26 Vdc, IDQ = 100 mA, f = 960 MHz, POUT = 15 W)
Drain Efficiency
(VDD = 26 Vdc, IDQ = 100 mA, f = 960 MHz, POUT = 15 W)
Input Return Loss
(VDD = 26 Vdc, IDQ = 100 mA, f = 960 MHz, POUT = 15 W)
Output VSWR Tolerance
(VDD = 26 Vdc, IDQ = 100 mA, f = 960 MHz, POUT = 15 W,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
Common Source Amplifier Gain
(VDD = 26 Vdc, IDQ = 100 mA, f = 1670 MHz, POUT = 15 W)
Drain Efficiency
(VDD = 26 Vdc, IDQ = 100 mA, f = 1670 MHz, POUT = 15 W)
Input Return Loss
(VDD = 26 Vdc, IDQ = 100 mA, f = 1670 MHz, POUT = 15 W)
Symbol Min Typ Max Unit
V(BR)DSS
65
— Vdc
VGS(th)
2
5 Vdc
VDS(Q)
3
5 Vdc
VDS(on)
0.25
Vdc
GP — 17 — dB
EFF (ŋ) — 50 — %
IRL — -10 — dB
Ψ No Degradation In Output Power
Before and After Test
GP
EFF (ŋ) —
12.5
50
dB
%
IRL — -10 — dB
(1) Device specifications obtained on a Production Test Fixture.
2





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