Effect Transistor. MAPLST2122-090CF Datasheet

MAPLST2122-090CF Transistor. Datasheet pdf. Equivalent

Part MAPLST2122-090CF
Description RF Power Field Effect Transistor
Feature www.DataSheet4U.com RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 90W, 28V 4/6/2005 Pr.
Manufacture Tyco Electronics
Datasheet
Download MAPLST2122-090CF Datasheet



MAPLST2122-090CF
RFwww.DataSheet4U.com Power Field Effect Transistor
LDMOS, 2110 — 2170 MHz, 90W, 28V
4/6/2005
Preliminary
Features
Q Designed for W-CDMA base station
applications in the 2.1 to 2.2 GHz
Frequency Band. Suitable for TDMA,
CDMA, W-CDMA and multicarrier power
amplifier applications.
Q 90W Output Power at P1dB (CW)
Q 11dB Minimum Gain at P1dB (CW)
Q W-CDMA Typical Performance:
(28VDC, -45dB ACPR @ 4.096MHz)
Q Output Power: 12W (typ.)
Q Gain: 12dB (typ.)
Q Efficiency: 16% (typ.)
Q 10:1 VSWR Ruggedness (CW @ 60W,
28V, 2110MHz)
Package Style
MAPLST2122-090CF
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Drain Current — Continuous
Total Power Dissipation @ TC = 25 °C
Storage Temperature
Junction Temperature
Symbol
VDSS
VGS
ID
PD
TSTG
TJ
Rating
65
20
20
206
-40 to +150
+200
Units
Vdc
Vdc
Adc
W
°C
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
RΘJC
Max
0.85
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.



MAPLST2122-090CF
RF Power LDMOS Transistor, 2110 — 2170 MHz, 90W, 28V
MAPLST2122-090CF
4/6/2005
Preliminary
Characteristic
Symbol Min
Typ
Max
Unit
DC CHARACTERISTICS @ 25ºC
Drain-Source Breakdown VoClthaagreacteristic
OFF(VCGHSA=R0AVCdTcE,RIDIS=T1IC00S µAdc)
Zero Gate Voltage Drain Leakage Current
(VDDSS = 6258 Vdc, VGGSS = 0)
ZGeartoe((VV—GDGaSSStoe==uV25rc6oVeltVdaLdcgec,ea,VkDVDarGSgaS=ein=0CL0)ue)rarekangt e Current
GGaattee((V—VTGDhSSSro=e=us5r1hc0oVelVddLcdeV,caoV,klIDtaDaSgg==ee60C0)umrreAn)t
Gate Quiescent Voltage
ON C(VHDAS R=A2C8TVEdRc,ISIDT=IC7S50 mA)
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 A)
Forward Transconductance
(VGS = 10 Vdc, ID = 1 A)
SyVm(BbRo)DlSS Mi6n5
Typ
Max
UnVidt c
IDSIDSSS
——
IDSIGSSS
IGVSGSS(th)
VDS(Q)
——
—2
3
VDS(on)
Gm —
—— 101 µAµdAcdc
——
—2.6
1 1 µAµdAcdc
1 4 µAVddcc
5 Vdc
TBD — Vdc
4.0 —
S
DYNAMIC CHARACTERISTICS @ 25ºC
DOuYtpNuAt CMapICaciCtaHncAeRACTERISTICS (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
Coss
98
pF
Crss
4.5
pF
FRUF NFUCNTCITOIONNAALL TTESSTTSS@(In25MºC/A(I-nCMO/MA-CTOeMstTFeisxttuFrixet)u(r2e)
Two-Tone Common-Source Amplifier Power Gain
(VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Gps — 11 — dB
Two-Tone Drain Efficiency
(VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
EFF (ŋ) — 33 — %
Two-Tone Common-Source Amplifier Intermodulation
(VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IMD — -30 — dBc
Input Return Loss
(VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
IRL — -13 — dB
Two-Tone Common-Source Amplifier Power Gain
Gps — 11 — dB
(VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Two-Tone Drain Efficiency
EFF (ŋ) — 33 — %
(VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Two-Tone Common-Source Amplifier Intermodulation
IMD — -30 — dBc
(VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Input Return Loss
IRL — -13 -9 dB
(VDS = 28 Vdc, POUT = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Output VSWR Tolerance
(VDD = 28 Vdc, POUT = 90 W PEP. IDQ = 750 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz, VSWR = 10:1, All Phase Angles at Frequency of
Tests)
Ψ
No Degradation In Output Power
Before and After Test
2





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