Window Surveillance. V6310 Datasheet

V6310 Surveillance. Datasheet pdf. Equivalent

Part V6310
Description Ultra Low Power 3-Pin Voltage Window Surveillance
Feature www.DataSheet4U.com R EM MICROELECTRONIC-MARIN SA V6310 Ultra Low Power 3-Pin Voltage Window Surv.
Manufacture EM Microelectronic
Total Page 4 Pages
Datasheet
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V6310
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EM MICROELECTRONIC-MARIN SA
V6310
Ultra Low Power 3-Pin Voltage Window Surveillance
with Time-out
Features
n Voltage Window monitoring
n Clear microprocessor restart after power up
n Processor reset at power down
n Reset output guaranteed down to VDD = 1 V
n Low power consumption: typ. 3 mA at VDD = 5 V
n - 40 to +85 OC temperature range
n On request extended temperature range, -40 to +125 OC
n On-chip oscillator
n No external components required
n Push-pull or Open drain output
n TO-92, SOT-23 5L and SOT-223 1) packages
n Pin compatible with DS 1233 A in TO-92 and SOT-223
1) On request
Description
The V6310 is a CMOS device which monitors the supply voltage
of any electronic system, and generates the appropriate Reset
signal. The g ap between the two thresholds defines the
allowed voltage range. As long as VDD stays inside this voltage
window, the output stays inactive. If VDD drops below VTHlow, or
rises above VTHhigh, the output gets active. When V DD enters into
the allowed range, the output remains active for an additional 50
ms (typ.). This allows the system to stabilize before getting fully
active. The lower thresho ld voltage may be obtained in
different versions:
2.0 V to 6 V
2.4 V to 6 V
2.8 V to 6 V
3.5 V to 6 V
4.0 V to 6 V
4.5 V to 6 V
Applications
All microprocessor applications where an automatic restart is
required:
n Computer electronics
n White / Brown goods
n Automotive electronics
n Industrial electronics
n Telecom systems
n Hand-held systems
Typical Operating Configuration
VDD
VDD
V6310
VSS
RES
or
RES
VDD
RES
or
Micro-
RES processor
VSS
GND
For Open drain version:
Fig. 1
Pin Assignment
TO-92
View
Flat Front
V6310
12 3
VDD
RES
or
VSS
RES
SOT-223 1)
VSS
SOT-23 5L
NC VSS NC
4
V6310
1 23
3 21
V6310
45
RES or
RES
VSS
1) On request
VDD
RES or
RES
VDD
Fig. 2
1



V6310
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Absolute Maximum Ratings
Parameter
Voltage at VDD to VSS
Min. voltage at RES or RES
Max. voltage at RES or RES
Storage temperature range
Symbol
VDD
Vmin
Vmax
TSTO
Conditions
-0.3V to+10 V
VSS - 0.3 V
VDD + 0.3 V
-65O to +150 OC
Table 1
Stresses above these listed maximum ratings may cause
permanent damage to the device. Exposure beyond specified
operating conditions may affect device reliability or cause
malfunction.
V6310
Handling Procedures
This device has built-in protection against high static voltages
or electric fields; however, anti-static precautions must be taken
as for any other CMOS component. Unless otherwise specified,
proper operation can only occur when all terminal voltages are
kept within the supply voltage range.
Operating Conditions
Parameter
Operating temperature1)
Positive supply voltage
Symbol Min.
TA -40
VDD 1
Typ . Max. Units
+125 OC
8V
Table 2
1) The maximum operating temperature is confirmed by
sampling at initial device qualification.
Electrical Characteristics
TA = -40 to +85 OC, unless otherwise specified
Parameter
Symbol
Supply current 1)
Threshold Low Voltage
Threshold High Voltage
Threshold hysteresis
RES Output Low Level
RES Output High Level
Output leakage current 2)
1) RES or RES open
2) Only for Open drain versions
IDD
IDD
IDD
VTHlow
VTHlow
VTHlow
VTHlow
VTHlow
VTHlow
VTHhigh
VHYS
VOL
VOL
VOL
VOH
VOH
VOH
ILEAK
Test Conditions
VDD = 2 V
VDD = 5 V
VDD = 8 V
Version: A,G,M
Version: B,H,N
Version: C,I,O
Version: D,J,P
Version: E,K,Q
Version: F,L,R
VDD = 5 V, IOL = 8 mA
VDD = 3 V, IOL = 4 mA
VDD = 1 V, IOL = 50 mA
VDD = 5 V, IOH= -8 mA
VDD = 3 V, IOH = -4 mA
VDD = 1 V, IOH = -100 mA
VDD = 5.5 V
Min.
1.77
2.09
2.48
3.11
3.55
4.05
5.58
4.3
2.3
850
Min.
at 25 OC
1.84
2.18
2.59
3.23
3.70
4.22
5.79
Typ.
1.5
3.0
5.2
1.95
2.32
2.73
3.42
3.88
4.42
6.10
25
175
140
20
4.5
2.6
950
0.05
Max.
at 25 OC
2.1
3.9
6.8
2.04
2.41
2.86
3.59
4.08
4.67
6.42
Max.
3.1
5.7
10.0
2.17
2.55
3.03
3.80
4.32
4.95
6.82
400
300
90
1
Units
mA
mA
mA
V
V
V
V
V
V
V
mV
mV
mV
mV
V
V
mV
mA
Table 3
Timing Characteristics
VDD = 5.0 V, TA = -40 to +85OC, unless otherwise specified
Parameter
Symbol Test Conditions
Power on reset time
Sensitivity
Sensitivity
around
around
VTHhigh
VTHlow
3)
Reaction time around VTHhigh
Reaction time around VTHlow 3)
tPOR
tSEN high
tSEN low
TRhigh
TRlow
for VDD = 5 V to 7 V in 5 ms
for VDD = 5 V to 3 V in 5 ms
for VDD = 5 V to 7 V in 5 ms
for VDD = 5 V to 3 V in 5 ms
3) Tested on versions with VTHlow higher than 3 V
Min.
25
18
20
20
22
Typ.
50
0.8 tRhigh
0.8 tRlow
55
75
Max.
75
90
150
Units
ms
ms
ms
ms
ms
Table 4
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