Power Switch. MASWSS0118 Datasheet

MASWSS0118 Switch. Datasheet pdf. Equivalent

Part MASWSS0118
Description GaAs SP4T 2.5 V High Power Switch
Feature www.DataSheet4U.com GaAs SP4T 2.5 V High Power Switch DC - 3.0 GHz Features • • • • • • Low Voltage.
Manufacture Tyco Electronics
Datasheet
Download MASWSS0118 Datasheet



MASWSS0118
www.DataSheet4U.com
GaAs SP4T 2.5 V High Power Switch
DC - 3.0 GHz
Features
Low Voltage Operation: 2.5 V
Low Harmonics: < -65 dBc at +34 dBm & 1 GHz
Low Insertion Loss: 0.65 dB at 1 GHz
High Isolation: 23 dB at 2 GHz
4 mm 16-Lead PQFN Package
0.5 micron GaAs PHEMT Process
Description
M/A-COM’s MASWSS0118 is a GaAs PHEMT
MMIC single pole four throw (SP4T) high power
switch in a low cost 4 mm 16-lead PQFN package.
The MASWSS0118 is ideally suited for applications
where high power, low control voltage, low insertion
loss, high isolation, small size, and low cost are
required.
Typical applications are for GSM and DCS handset
systems that connect separate transmit and receive
functions to a common antenna, as well as other
handset and related applications. This part can be
used in all systems operating up to 3.0 GHz
requiring high power at low control voltage.
The MASWSS0118 is fabricated using a 0.5 micron
gate length GaAs PHEMT process. The process
features full passivation for performance and
reliability.
Ordering Information
Part Number
MASWSS0118TR
MASWSS0118TR-3000
MASWSS0118SMB
Package
1000 piece reel
3000 piece reel
Sample Test Board
1. Reference Application Note M513 for reel size information.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Functional Schematic
MASWSS0118
V2
Pin 16
Pin 1
V1
RF1
39 pF
GND
RF2
39 pF
RF4
39 pF
GND
GND
RF3
39 pF
Pin Configuration
Pin No.
Pin Name
Description
1 V1
2 RF1
3 GND
Control 1
RF Port 1
RF Ground
4 RF2
5 GND
6 V2
7 V3
8 GND
9 RF3
10 GND
11 GND
12 RF4
13 GND
14 V4
15 GND
16 ANT
17 Paddle 2
RF Port 2
RF Ground
Control 2
Control 3
RF Ground
RF Port 3
RF Ground
RF Ground
RF Port 4
RF Ground
Control 4
RF Ground
Antenna Port
RF Ground
2. The exposed pad centered on the package bottom must be
connected to RF and DC ground.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.



MASWSS0118
GaAs SP4T 2.5 V High Power Switch
DC - 3.0 GHz
MASWSS0118
V2
Electrical Specifications: TA = 25°C, Z0 = 50 3
Parameter
Test Conditions
Units Min. Typ. Max.
Insertion Loss 4
DC – 1 GHz
1 – 2 GHz
2 - 3 GHz
dB
0.65
0.85
dB
0.80
1.00
dB — 1.00
Isolation
DC – 1 GHz
1 – 2 GHz
2 - 3 GHz
dB 27 29.0
dB 21 23.0
dB — 18.5
Return Loss
DC – 3 GHz
dB — 20 —
IP3
IP2
P.1dB
2nd Harmonic
3rd Harmonic
Trise, Tfall
Ton, Toff
Transients
Two Tone +26 dBm, 5 MHz Spacing, > 50 MHz
VC = 0 V / 2.5 V
dBm
57
Two Tone +26 dBm, 5 MHz Spacing, > 50 MHz
VC = 0 V / 2.5 V
dBm
81
VC = 0 V / 2.5 V
dBm
38
1 GHz, PIN = +34 dBm, VC = 0 V / 2.5 V
dBc — -80 -71
1 GHz, PIN = +34 dBm, VC = 0 V / 2.5 V
dBc — -68 -65
10% RF to 90% RF, 90% to 10% RF, VC = 0 V / 2.5 V
µS — 0.2 —
50% control to 90% RF, 50% control to 10% RF, VC = 0 V / 2.5 V
µS
0.2
mV — 35 —
Control Current
VC = 0 V / 2.5 V, 34 dBm
µA — 10 50
3. External DC blocking capacitors are required on all RF ports.
4. Insertion Loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 500 MHz, 39 pF for 0.5 GHz - 3 GHz.
Absolute Maximum Ratings 5,6
Parameter
Absolute Maximum
Input Power
(0.5 - 3.0 GHz, 2.5 V Control)
Voltage
Operating Temperature
+38 dBm
± 8.5 volts
-40°C to +85°C
Storage Temperature
-65°C to +150°C
5. Exceeding any one or combination of these limits may cause
permanent damage to this device.
6. M/A-COM does not recommend sustained operation near
these survivability limits.
Handling Procedures
Please observe the following precautions to avoid
damage:
Truth Table 7,8
V1 V2 V3 V4 ANT- ANT- ANT- ANT-
RF1 RF2 RF3 RF4
1 0 0 0 On Off Off Off
0 1 0 0 Off On Off Off
0 0 1 0 Off Off On Off
0 0 0 1 Off Off Off On
7. Differential voltage, V (state 1) -V (state 2), must be 2.5 V
minimum.
8. 0 = -5 V to +2.5 V, 1 = -2.5 V to +5 V
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive to
electrostatic discharge (ESD) and can be damaged by
static electricity. Proper ESD control techniques should
be used when handling these devices.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America Tel: 800.366.2266 / Fax: 978.366.2266
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.





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