ZENER PROTECTED. SD211 Datasheet

SD211 PROTECTED. Datasheet pdf. Equivalent

Part SD211
Description (SD211 - SD215) N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED
Feature www.DataSheet4U.com SD-SST211/213/215 Linear Integrated Systems N-CHANNEL LATERAL DMOS SWITCH ZENER.
Manufacture Linear Integrated Systems
Total Page 3 Pages
Datasheet
Download SD211 Datasheet



SD211
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Linear Integrated Systems
Product Summary
SD-SST211/213/215
N-CHANNEL LATERAL
DMOS SWITCH
ZENER PROTECTED
Features
• Ultra-High Speed Switching—tON: 1 ns
• Ultra-Low Reverse Capacitance: 0.2 pF
• Low Guaranteed rDS @5 V
• Low Turn-On Threshold Voltage
• N-Channel Enhancement Mode
Benefits
• High-Speed System Performance
• Low Insertion Loss at High Frequencies
• Low Transfer Signal Loss
• Simple Driver Requirement
• Single Supply Operation
Applications
• Fast Analog Switch
• Fast Sample-and-Holds
• Pixel-Rate Switching
• DAC Deglitchers
• High-Speed Driver
Description
The SD211DE/SST211 series consists of enhancement-mode
MOSFETs designed for high speed low-glitch switching in audio,
video, and high-frequency applications. The SD211 may be used
for ±5-V analog switching or as a high speed driver of the SD214.
The SD214 is normally used for ±10-V analog switching. These
MOSFETs utilize lateral construction to achieve low capacitance
and ultra-fast switching speeds. An integrated Zener diode
provides ESD protection. These devices feature a poly-silicon
gate for manufacturing reliability.
For similar products see: quad array—SD5000/5400 series, and
non-Zener protection—SD210DE/214DE.
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261



SD211
Absolute Maximum Ratings (TA = 250C Unless Otherwise Noted)
Gate-Drain, Gate-Source Voltage (SD211DE/SST211) ................... -30/25 V
(SD213DE/SST213) .................. -15/25 V
(SD215DE/SST215) .................. -25/30 V
Gate-Substrate Voltagea
(SD211DE/SST211 ................... -0.3/25 V
(SD213DE/SST213) ................. -0.3/25 V
(SD215DE/SST215) ................. -0.3/30 V
Drain-Source Voltage
(SD211DE/SST211) .......................... 30 V
(SD213DE/SST213) ......................... 10 V
(SD215DE/SST215) ......................... 20 V
Source-Drain Voltage
(SD211DE/SST21) ........................... 10 V
(SD213DE/SST213) ......................... 10 V
(SD215DE/SST215) ......................... 20 V
Drain-Substrate Voltage
(SD211DE/SST211) .......................... 30 V
(SD213DE/SST213) ......................... 15 V
(SD215DE/SST215) ......................... 25 V
Source-Substrate Voltage
(SD211DE/SST211) .......................... 15 V
(SD213DE/SST213) ......................... 15 V
(SD215DE/SST215) ......................... 25 V
Drain Current ........................................................................................ 50 mA
Lead Temperature (1/16” from case for 10 seconds) ............................. 3000C
Storage Temperature .................................................................... -65 to 1500C
Operating Junction Temperature ................................................. -55 to 1250C
Power Dissipation 300 mWa ....................................................................................................................................
Notes:
a. Derate 3 mW/0C above 250C
Specificationsa
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261





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