N-CHANNEL HJ-FET. NE3509M04 Datasheet

NE3509M04 HJ-FET. Datasheet pdf. Equivalent

Part NE3509M04
Description L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Feature www.DataSheet4U.com PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR NE350.
Manufacture CEL
Total Page 11 Pages
Datasheet
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NE3509M04
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PRELIMINARY PRODUCT INFORMATION
HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3509M04
L to S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
- Super Low Noise Figure & Associated Gain :
NF=0.4dB TYP. Ga=17.5dB TYP. @f=2GHz, VDS=2V,ID=10mA
- Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. )
APPLICATIONS
- Satellite Radio(SDARS, DMB, etc.) antenna LNA
- GPS antenna LNA
- LNA for Micro-wave communication system
ORDERING INFORMATION
Part Number
Order Number
Quantity
Marking
Supplying Form
NE3509M04
NE3509M04-A
50pcs (Non reel)
- 8 mm wide emboss taping
NE3509M04-T2
NE3509M04-T2-A 3 Kpcs/reel
V80 - Pin1(Source), Pin2(Drain)
face the perforation side of the tape
Remark To order evaluation samples, please contact your local NEC sales office.
Part number for sample order: NE3509M04
ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C )
PARAMETER
SYMBOL
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Drain Current
ID
Gate Current
IG
Total Power Dissipation
Ptot Note
Channel Temperature
Tch
Storage Temperature
Tstg
Note Mounted on 1.08cm2 X 1.0mm(t) glass epoxy PCB
RATINGS
4.0
-3.0
IDSS
200
150
+150
- 65 to +150
UNIT
V
V
mA
µA
mW
°C
°C
Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Document No. P*****EJ0V0PM00 (10th edition)
Date Published October 2005 CP(K)
© NEC Compound Semiconductor Devices 2005



NE3509M04
NE3509M04
RECOMMENDED OPERATING CONDITIONS(TA = +25 °C)
PARAMETER
SYMBOL MIN.
TYP.
Drain to Source Voltage
VDS
---
2
Drain Current
ID --- 10
Input Power
Pin --- ---
MAX.
3
20
0
UNIT
V
mA
dBm
ELECTRICAL CHARACTERISTICS TA = +25 °C)
PARAMETER
SYMBOL TEST CONDITIONS
Gate to Source Leak Current
IGSO
VGS=-3V
Saturated Drain Current
IDSS
VDS=2V, VGS=0V
Gate to Source Cutoff Voltage
Trans conductance
VGS(off)
gm
VDS=2V, ID=50µA
VDS=2V, ID=10mA
Noise Figure
Associated Gain
Output Power at 1dB Gain
Compression Point
NF
Ga
Po(1dB)
VDS=2V, ID=10mA
f 2GHz
VDS=2V,
ID=10mA(Non-RF)
f 2GHz
MIN.
---
30
-0.35
80
---
14.5
---
TYP.
0.5
45
-0.5
---
0.4
17.5
MAX.
10
60
-0.65
---
0.8
---
UNIT
uA
mA
V
mS
dB
dB
11 --- dBm
The information in this document is subject to change without notice.
PRELIMINARY PRODUCT INFORMATION





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