SILICON TRANSISTOR. NE688M23 Datasheet

NE688M23 TRANSISTOR. Datasheet pdf. Equivalent

Part NE688M23
Description NPN SILICON TRANSISTOR
Feature www.DataSheet4U.com PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M23 FEATURES • NEW MINIATU.
Manufacture NEC
Datasheet
Download NE688M23 Datasheet



NE688M23
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PRELIMINARY DATA SHEET
NPN SILICON TRANSISTOR NE688M23
FEATURES
• NEW MINIATURE M23 PACKAGE:
– World's smallest transistor package footprint —
leads are completely underneath package body
– Low profile/0.55 mm package height
– Ceramic substrate for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 9.5 GHz
• LOW NOISE FIGURE:
NF = 1.7 dB at 2 GHz
• HIGH COLLECTOR CURRENT:
IC MAX = 100 mA
DESCRIPTION
The NE688M23 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/ceramic substrate style "M23"
package is ideal for today's portable wireless applications. The
NE688 is also available in chip and six different low cost plastic
surface mount package styles.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M03
0.5
1 0.25
0.4
2 3 0.25
0.6
0.15
0.2 0.15
BOTTOM VIEW
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
fT
NF
|S21E|2
hFE2
ICBO
IEBO
CRE3
PARAMETERS AND CONDITIONS
Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz
Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz
Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz
Forward Current Gain at VCE = 1 V, IC = 3 mA
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz
UNITS
GHz
dB
dB
µA
µA
pF
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
NE688M23
2SC5651
M23
MIN TYP MAX
45
1.9 2.5
34
80 145
0.1
0.1
0.7 0.8
California Eastern Laboratories



NE688M23
NE688M23
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
9
VCEO Collector to Emitter Voltage V
6
VEBO Emitter to Base Voltage
V
2
IC Collector Current
mA 100
PT Total Power Dissipation
mW
TBD
TJ Junction Temperature °C 150
TSTG Storage Temperature
°C -65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
120
VCE = 2 V
100
80
60
40
20
0
0
0.2 0.4 0.6 0.8
Base to Emitter Voltage, VCE (V)
1
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
IB 50 µA step
80
450 µA
350 µA
60
250 µA
40
20 150 µA
IB = 50 µA
0
02468
Collector to Emitter Voltage, VCE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1000
VCE = 2 V
100
10
0.01
0.1 1 10
Collector Current, IC (mA)
100
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
8
VCE= 3 V
7 f = 2 GHz
6
5
4
3
2
1
0
1 10 100
Collector Current, IC (mA)
NOISE FIGURE/ASSOCIATED GAIN vs.
COLLECTOR CURRENT
10 10
VCE = 3 V
f = 1 GHz
8
GA
8
66
44
22
NF
00
1 10 100
Collector Current, IC (mA)
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
02/10/2000





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