EPITAXIAL TRANSISTOR. NE69039 Datasheet

NE69039 TRANSISTOR. Datasheet pdf. Equivalent

Part NE69039
Description NPN SILICON EPITAXIAL TRANSISTOR
Feature www.DataSheet4U.com PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES • OUTPUT POWE.
Manufacture NEC
Datasheet
Download NE69039 Datasheet



NE69039
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PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR NE69039
FEATURES
• OUTPUT POWER AT 1dB COMPRESSION POINT:
27.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB,
Duty 1/8
• 4 PIN MINI MOLD PACKAGE: NE69039
DESCRIPTION
The NE69039 is a low voltage, NPN Silicon Bipolar Transistor
for pulsed power applications. The device is designed to op-
erate from a 3.6 V supply, and deliver over 1/2 watt of power
output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These
characteristics make it an ideal device for TX output stage in a
1.9 GHZ digital cordless telephone (DECT or PHS). The part
is supplied in a SOT-143 (SC-61) 4-pin Mini-mold package
and is available on tape and reel.
The NE69039 transistors are manufactured to NEC's stringent
quality assurance standards to ensure highest reliability and
consistent superior performance.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 39
+0.2
2.8 -0.3
+0.2
1.5 -0.1
+0.10
0.4 -0.05
(LEADS 2, 3, 4)
2.9 ± 0.2 0.95
0.85
2
3
1.9
1
+0.10
0.6 -0.05
1.1+-00..21 0.8
4 1) Collector
2) Emitter
3) Base
4) Emitter
0.16
+0.10
-0.06
0 to 0.1
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
SYMBOLS
ICBO
IEBO
hFE
P-1
GP
ηC
TON
PART NUMBER
PACKAGE CODE
PARAMETERS
Collector Cutoff Current, VCB = 5 V, IE = 0
Emitter Cutoff Current, VEB = 1 V, IC = 0
DC Current Gain, VCE = 3.6 V, IC = 100 mA
Output Power
Power Gain
Collector Efficiency
VCE = 3.6 V, f = 1.9 GHZ
ICq = 1 mA (Class AB)
Duty 1/8
Maximum Device On Time
UNITS
µA
µA
dBm
dB
%
MS
NE69039
39
MIN TYP MAX
2.5
2.5
30
27.5
5.0 6.0
50 72
10.0
California Eastern Laboratories



NE69039
NE69039
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS
VCBO
VCEO
VEBO
IC
PT
Tj
TSTG
PARAMETERS
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
UNITS
V
V
V
mA
mW
°C
°C
RATINGS
9.0
6.0
2.0
300
200 (CW)
150
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
APPLICATION
(1) TX Amplifier for DECT
+3 dBm
Po = 27 dBm
NE68839
NE68939
(2) TX Amplifier for PHS
-14 dBm
NE69039
P1 = 22 dBm
µPC2771T
NE68939
NE69039
OUTPUT POWER, COLLECTOR
EFFICIENCY, COLLECTOR CURRENT
AND POWER GAIN VS. INPUT POWER
30
f = 1.9 GHZ, VCC = 3.6V
IC = 1mA (Duty 1/8)
25
Pout
ηC
20 80
60
15 40
20
IC 0
10 8
GP 7
6
5
5
4
5 10 15 20
Input Power, Pin (dBm)
25
30
20
10
0
OUTLINE 39
RECOMMENDED P.C.B. LAYOUT
2.4
23
1.9
1.0
14
1.0
ORDERING INFORMATION
PART NUMBER
NE69039-T1
QTY
3K/REEL
Note:
1. Lead material: Cu
Lead plating: PbSn
ZIN (), ZOUT () DATA
j50
j25 j100
j10 ZIN
ZOUT
0
0
-j10
-j25 -j100
-j50
ZOUT
ZIN
TYPICAL DATA
f = 1.9 GHz, VCC = 3.6 V, ICQ = 1 mA, DUTY = 1/8
P1dB
ηC
IC
GL
27.5
72
27
6.7
dBm
%
mA
db
IMPEDANCE LOOKING INTO DEVICE
VCC = 3.6 V, ICQ = 1 mA, CLASS AB
FREQUENCY
(GHZ)
ZIN
()
1.9 7.42+j14.2
0.9 4.0+j8.8
ZOUT
()
15.8-j2.64
4.4-j4.6
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
DATA SUBJECT TO CHANGE WITHOUT NOTICE
07/06/2000





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