SILICON TRANSISTOR. NE851M33 Datasheet

NE851M33 TRANSISTOR. Datasheet pdf. Equivalent

Part NE851M33
Description NPN SILICON TRANSISTOR
Feature www.DataSheet4U.com DATA SHEET NEC's NPN SILICON TRANSISTOR NE851M33 FEATURES • • • LOW PHASE DIS.
Manufacture CEL
Total Page 6 Pages
Datasheet
Download NE851M33 Datasheet



NE851M33
www.DataSheet4U.com
DATA SHEET
NEC's NPN SILICON TRANSISTOR NE851M33
FEATURES
LOW PHASE DISTORTION, LOW VOLTAGE OPERATION
• IDEAL FOR OSC APPLICATIONS
3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE
ORDERING INFORMATION
PART NUMBER
NE851M33-A
NE851M33-T3-A
QUANTITY
50 pcs (Non reel)
10 kpcs/reel
SUPPLYING FORM
• 8 mm wide embossed taping
• Pin 2 (Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA =+25ºC)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
RATINGS
9.0
5.5
1.5
100
130
150
65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB
UNIT
V
V
V
mA
mW
°C
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
California Eastern Laboratories



NE851M33
NE851M33
ELECTRICAL CHARACTERISTICS (TA =+25ºC)
PARAMETER
SYMBOL
TEST CONDITIONS
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
ICBO
IEBO
hFE Note 1
VCB = 5 V, IE = 0 mA
VEB = 1 V, IC = 0 mA
VCE = 1 V, IC = 5 mA
fT
fT
|S21e|2
|S21e|2
NF
Cre Note 2
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 1 V, IC = 15 mA, f = 2 GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
VCE = 1 V, IC = 15 mA, f = 2 GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz,
ZS = Zopt
VCB = 0.5 V, IC = 0 mA, f = 1 MHz
Notes 1. Pulse measurement: PW 350 μs, Duty Cycle 2%
2. Collector to base capacitance when the emitter grounded
MIN.
TYP. MAX. UNIT
– – 600
– – 600
100 120 145
nA
nA
3.0 4.5
– GHz
5.0 6.5
– GHz
3.0 4.0 – dB
4.5 5.5 – dB
– 1.9 2.5 dB
– 0.6 0.8 pF
hFE CLASSIFICATION
RANK
Marking
hFE Value
FB
E7
100 to 145





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