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DATASHEET
NEC's NPN SiGe NESG3031M14 HIGH FREQUENCY TRANSISTOR
FEATURES
THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE, HIGH-GAIN AMPLIFICATION: NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz MAXIMUM STABLE POWER GAIN: MSG = 15.0 dB TYP. @ ...
