PLANAR TRANSISTOR. DXTA42 Datasheet

DXTA42 TRANSISTOR. Datasheet pdf. Equivalent

Part DXTA42
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Feature www.DataSheet4U.com DC COMPONENTS CO., LTD. R DXTA42 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICA.
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DXTA42
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DXTA42
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for application as a video output to drive
color CRT, or as a dialer circuit in electronics
telephone.
SOT-89
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
300
300
6
500
1
+150
-55 to +150
Unit
V
V
V
mA
W
oC
oC
.066(1.70)
.059(1.50)
.063(1.60)
.055(1.40)
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
123
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max
Collector-Base Breakdown Volatge
BVCBO 300
-
-
Collector-Emitter Breakdown Voltage
BVCEO 300
-
-
Emitter-Base Breakdown Volatge
BVEBO
6
-
-
Collector Cutoff Current
ICBO
-
- 100
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
IEBO
VCE(sat)
VBE(sat)
-
-
-
- 100
- 0.5
- 0.9
hFE1
25
-
-
DC Current Gain(1)
hFE2
40
-
-
hFE3
40
-
-
Transition Frequency
fT 50 -
-
Output Capacitance
Cob - 3 -
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
nA
nA
V
V
-
-
-
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=10µA
VCB=260V
VEB=6V
IC=20mA, IB=2mA
IC=20mA, IB=2mA
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=30mA, VCE=10V
VCE=20V, IC=10mA, f=100MHz
VCB=20V







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