N-Channel MOSFET. FQAF7N60 Datasheet

FQAF7N60 MOSFET. Datasheet pdf. Equivalent

Part FQAF7N60
Description 600V N-Channel MOSFET
Feature www.DataSheet4U.com FQAF7N60 April 2000 QFET FQAF7N60 600V N-Channel MOSFET General Description T.
Manufacture Fairchild Semiconductor
Datasheet
Download FQAF7N60 Datasheet




FQAF7N60
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FQAF7N60
600V N-Channel MOSFET
April 2000
QFETTM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Features
• 5.7A, 600V, RDS(on) = 1.0@VGS = 10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 16 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G DS
TO-3PF
FQAF Series
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Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
FQAF7N60
600
5.7
3.6
22.8
±30
580
5.7
8.3
4.5
83
0.66
-55 to +150
300
Typ Max
-- 1.5
-- 40
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°CW
°CW
©2000 Fairchild Semiconductor International
Rev. A, April 2000



FQAF7N60
Electrical CharacteristicsTC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
--
0.67
--
--
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250µA
VGS = 10 V, ID = 2.9 A
VDS = 50 V, ID = 2.9 A
(Note 4)
3.0
--
--
--
0.8
6
5.0
1.0
--
V
S
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1100 1430
-- 135 175
-- 16 21
pF
pF
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300 V, ID = 7.4 A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 7.4 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
30
80
65
60
29
7
14.5
70
170
140
130
38
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 5.7 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 7.4 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 33mH, IAS = 5.7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD  7.4A, di/dt  200A/µs, VDD  BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width  300µs, Duty cycle  2%
5. Essentially independent of operating temperature
--
--
--
--
--
-- 5.7
-- 22.8
-- 1.4
320 --
2.4 --
A
A
V
ns
µC
©2000 Fairchild Semiconductor International
Rev. A, April 2000







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