Power MOSFET. IRFBA1405PPBF Datasheet

IRFBA1405PPBF MOSFET. Datasheet pdf. Equivalent

Part IRFBA1405PPBF
Description Power MOSFET
Feature www.DataSheet4U.com AUTOMOTIVE MOSFET Typical Applications l l l l l l PD -95152 Electric Power S.
Manufacture International Rectifier
Datasheet
Download IRFBA1405PPBF Datasheet




IRFBA1405PPBF
PD -95152A
Typical Applications
l Industrial Motor Drive
Benefits
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
IRFBA1405PPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 5.0mΩ
G
S ID = 174A†
Description
Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve extremely low on-resistance per
silicon area. Additional features of this MOSFET are a 175oC junction
operating temperature, fast switching speed and improved ruggedness
in single and repetitive avalanche. The Super-220 TM is a package that
has been designed to have the same mechanical outline and pinout as
the industry standard TO-220 but can house a considerably larger
silicon die. The result is significantly increased current handling capability
over both the TO-220 and the much larger TO-247 package. The
combination of extremely low on-resistance silicon and the Super-220
TM package makes it ideal to reduce the component count in multiparalled
TO-220 applications, reduce system power dissipation, upgrade
existing designs or have TO-247 performance in a TO-220 outline. This
package has been designed to meet automotive, Q101, qualification
standard.
These benefits make this design an extremely efficient and reliable
device for use in a wide variety of applications.
Super-220™
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Recommended clip force
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Max.
174†
123†
680
330
2.2
± 20
560
See Fig.12a, 12b, 15, 16
5.0
-40 to + 175
-55 to + 175
300 (1.6mm from case )
20
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
N
1
08/01/11



IRFBA1405PPBF
IRFBA1405PPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
Min. Typ. Max.
55 ––– –––
––– 0.057 –––
––– 4.3 5.0
2.0 ––– 4.0
69 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 170 260
––– 44 66
––– 62 93
––– 13 –––
––– 190 –––
––– 130 –––
––– 110 –––
––– 4.5 –––
––– 7.5 –––
––– 5480 –––
––– 1210 –––
––– 280 –––
––– 5210 –––
––– 900 –––
––– 1500 –––
Units
V
V/°C
mΩ
V
S
μA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 101A „
VDS = 10V, ID = 250μA
VDS = 25V, ID = 110A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 101A
VDS = 44V
VGS = 10V„
VDD = 38V
ID = 110A
RG = 1.1Ω
VGS = 10V „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 174†
––– ––– 680
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 101A, VGS = 0V „
––– 88 130 ns TJ = 25°C, IF = 101A
––– 250 380 nC di/dt = 100A/μs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
RθJC
RθCS
RθJA
2
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
Units
0.45 °C/W
–––
58
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