PDP SWITCH. IRFP4228PBF Datasheet

IRFP4228PBF SWITCH. Datasheet pdf. Equivalent

Part IRFP4228PBF
Description PDP SWITCH
Feature www.DataSheet4U.com PD - 97229 PDP SWITCH Features l Advanced Process Technology l Key Parameters .
Manufacture International Rectifier
Datasheet
Download IRFP4228PBF Datasheet




IRFP4228PBF
www.DataSheet4U.com
PDP SWITCH
PD - 97229
IRFP4228PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP
Sustain, Energy Recovery and Pass
Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy
Recovery and Pass Switch Applications
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for
Robustness and Reliability
Key Parameters
VDS min
150
VDS (Avalanche) typ.
180
RDS(ON) typ. @ 10V
12
IRP max @ TC= 100°C
170
TJ max
175
DD
V
V
m:
A
°C
G
S
GDS
TO-247AC
G
Gate
D
Drain
S
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
fJunction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Max.
±30
78
55
330
170
310
150
2.0
-40 to + 175
300
x x10lb in (1.1N m)
Typ.
–––
0.24
–––
Max.
0.49
–––
40
Units
V
A
W
W/°C
°C
N
Units
°C/W
Notes  through † are on page 8
www.irf.com
1
06/26/06



IRFP4228PBF
IRFP4228PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
150 ––– ––– V VGS = 0V, ID = 250µA
e––– 150 ––– mV/°C Reference to 25°C, ID = 1mA
––– 12 15.5 mVGS = 10V, ID = 33A
3.0 ––– 5.0
V VDS = VGS, ID = 250µA
VGS(th)/TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– -14 ––– mV/°C
––– ––– 20
µA VDS = 150V, VGS = 0V
––– ––– 1.0 mA VDS = 150V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
170 ––– ––– S VDS = 25V, ID = 50A
e––– 72 110 nC VDD = 120V, ID = 50A, VGS = 10V
Qgd
tst
EPULSE
Ciss
Coss
Crss
Coss eff.
Gate-to-Drain Charge
Shoot Through Blocking Time
Energy per Pulse
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
––– 26 –––
100 ––– –––
––– 58 –––
––– 110 –––
––– 4530 –––
––– 550 –––
––– 100 –––
––– 480 –––
ns VDD = 120V, VGS = 15V, RG= 5.1
L = 220nH, C= 0.3µF, VGS = 15V
µJ VDS = 120V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.3µF, VGS = 15V
VDS = 120V, RG= 5.1Ω, TJ = 100°C
VGS = 0V
pF VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
nH 6mm (0.25in.)
LS Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
Avalanche Characteristics
EAS
EAR
VDS(Avalanche)
IAS
Parameter
dSingle Pulse Avalanche Energy
™Repetitive Avalanche Energy
ÙRepetitive Avalanche Voltage
ÃdAvalanche Current
Diode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Typ.
Max.
Units
––– 210 mJ
––– 33 mJ
180 ––– V
––– 50 A
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
76
230
Max. Units
Conditions
78 MOSFET symbol
A showing the
330 integral reverse
p-n junction diode.
e1.3 V TJ = 25°C, IS = 50A, VGS = 0V
110 ns TJ = 25°C, IF = 50A, VDD = 50V
e350 nC di/dt = 100A/µs
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