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LN151L

GaAs Infrared Light Emitting Diodes

Description

Infrared Light Emitting Diodes LN151F, LN151L GaAs Infrared Light Emitting Diodes For optical control systems Features High-power output, high-efficiency : PO = 7.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 1 µs (typ.) LN151F ø4.6±0.15 Unit : mm Glass window 12.7 min. 4.5±0.2 2-ø0.45±0.05 2.54±0.25 2 0. 0± 1. 1. 0± 0. 15 3...

Panasonic Semiconductor

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