Power MOSFET. IRF7207PBF Datasheet

IRF7207PBF MOSFET. Datasheet pdf. Equivalent


International Rectifier IRF7207PBF
www.DataSheet4U.com
PD - 95166
IRF7207PbF
HEXFET® Power MOSFET
l Generation 5 Technology
l P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
S1
S2
S3
8
A
D
7D
6D
VDSS = -20V
l Fast Switching
l Lead-Free
Description
G4
5 D RDS(on) = 0.06
Top View
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in a
typical PCB mount application.
Absolute Maximum Ratings
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
VGSM
EAS
dv/dt
TJ, TSTG
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
SO-8
Max.
-20
-5.4
-4.3
-43
2.5
1.6
0.02
± 12
-16
140
-5.0
-55 to + 150
Units
V
A
W
W/°C
V
V
V/ns
°C
Thermal Resistance
RθJA
www.irf.com
Parameter
Maximum Junction-to-Ambient…
Typ.
–––
Max.
50
Units
°C/W
1
10/6/04


IRF7207PBF Datasheet
Recommendation IRF7207PBF Datasheet
Part IRF7207PBF
Description Power MOSFET
Feature IRF7207PBF; www.DataSheet4U.com PD - 95166 IRF7207PbF HEXFET® Power MOSFET Generation 5 Technology P-Channel M.
Manufacture International Rectifier
Datasheet
Download IRF7207PBF Datasheet




International Rectifier IRF7207PBF
IRF7207PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20 ––– ––– V VGS = 0V, ID = -250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– -0.011 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
Static Drain-to-Source On-Resistance
––– ––– 0.06
––– ––– 0.10
VGS = -4.5V, ID = -5.4A „
VGS = -2.7V, ID = -2.7A „
VGS(th)
Gate Threshold Voltage
-0.7 ––– ––– V VDS = VGS, ID = -250µA
gfs Forward Transconductance
8.3 ––– ––– S VDS = -10V, ID = -5.4A
IDSS Drain-to-Source Leakage Current
––– ––– -1.0
VDS = -16V, VGS = 0V
––– ––– -25 µA VDS = -16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100
––– ––– 100
nA
VGS = 12V
VGS = -12V
Qg Total Gate Charge
Qgs Gate-to-Source Charge
––– 15 22
––– 2.2 3.3
ID = -5.4A
nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge
––– 5.7 8.6
VGS = -4.5V, „
td(on)
Turn-On Delay Time
––– 11 –––
VDD = -10V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 24 –––
––– 43 –––
ns
ID = -1.0A
RG = 6.0
tf Fall Time
––– 41 –––
RD = 10, „
Ciss Input Capacitance
––– 780 –––
VGS = 0V
Coss
Output Capacitance
––– 410 ––– pF VDS = -15V
Crss Reverse Transfer Capacitance
––– 200 –––
ƒ = 1.0MHz,
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
42
50
Max.
-3.1
-43
-1.0
63
75
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = -3.1A, VGS = 0V ƒ
TJ = 25°C, IF = -3.1A
di/dt = -100A/µs ƒ
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 9.6mH
RG = 25, IAS = -5.4A.
2
ƒ ISD -5.4A, di/dt -79A/µs, VDD V(BR)DSS,
TJ 150°C
„ Pulse width 300µs; duty cycle 2%.
… When mounted on 1 inch square copper board, t<10 sec
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International Rectifier IRF7207PBF
100
VGS
TOP -7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
10
-2.25V
20µs PULSE WIDTH
1 TJ= 25 °C
0.1 1 10
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
IRF7207PbF
100
VGS
TOP -7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
10
-2.25V
20µs PULSE WIDTH
1 TJ= 150 °C
0.1 1 10
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25 °C
TJ = 150°C
10
V DS= -10V
1 20µs PULSE WIDTH
2.0 3.0 4.0 5.0 6.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 ID = -5.4A
1.5
1.0
0.5
0.0 VGS = --41.05VV
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3







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