POWER MOSFET. IRHY57130CM Datasheet

IRHY57130CM MOSFET. Datasheet pdf. Equivalent


International Rectifier IRHY57130CM
www.DataSheet4U.com
PD - 93826D
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number Radiation Level RDS(on)
IRHY57130CM 100K Rads (Si) 0.07
IRHY53130CM 300K Rads (Si) 0.07
IRHY54130CM 500K Rads (Si) 0.07
IRHY58130CM1000K Rads (Si) 0.085
IRHY57130CM
JANSR2N7484T3
100V, N-CHANNEL
REF: MIL-PRF-19500/702
5 TECHNOLOGY
™
ID
18A*
18A*
18A*
18A*
QPL Part Number
JANSR2N7484T3
JANSF2N7484T3
JANSG2N7484T3
JANSH2N7484T3
TO-257AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications.These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n Single Event Effect (SEE) Hardened
n Ultra Low RDS(on)
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
18*
14 A
72
75 W
0.6 W/°C
VGS
Gate-to-Source Voltage
±20 V
EAS Single Pulse Avalanche Energy Á
87
mJ
IAR Avalanche Current À
18 A
EAR
Repetitive Avalanche Energy À
7.5 mJ
dv/dt
Peak Diode Recovery dv/dt Â
1.4 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
-55 to 150
300 (0.063in./1.6mm from case for 10sec)
oC
Weight
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
4/26/06


IRHY57130CM Datasheet
Recommendation IRHY57130CM Datasheet
Part IRHY57130CM
Description (IRHY5x130CM) RADIATION HARDENED POWER MOSFET
Feature IRHY57130CM; www.DataSheet4U.com PD - 93826D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summa.
Manufacture International Rectifier
Datasheet
Download IRHY57130CM Datasheet




International Rectifier IRHY57130CM
IRHY57130CM, JANSR2N7484T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
BVDSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
100
2.0
13
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ Max Units
——
V
0.11 — V/°C
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
— 0.07
VGS = 12V, ID = 14A Ã
— 4.0
——
— 10
— 25
— 100
— -100
— 50
— 7.4
— 20
— 25
— 100
— 35
— 30
6.8 —
1005
365
50
V
S( )
µA
nA
nC
ns
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 14A Ã
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 18A
VDS = 50V
VDD = 50V, ID = 18A,
VGS =12V, RG = 7.5
nH Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
VGS = 0V, VDS = 25V
pF f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) — — 18*
ISM Pulse Source Current (Body Diode) À
— — 72
A
VSD Diode Forward Voltage
— — 1.2 V
trr Reverse Recovery Time
— — 250 ns
QRR Reverse Recovery Charge
— — 850 nC
Tj = 25°C, IS = 18A, VGS = 0V Ã
Tj = 25°C, IF = 18A, di/dt 100A/µs
VDD 25V Ã
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
— — 1.67
°C/W
— — 80
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2 www.irf.com



International Rectifier IRHY57130CM
Radiation Characteristics
IRHY57130CM, JANSR2N7484T3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 500K Rads(Si)1 1000K Rads (Si)2 Units
Min Max Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage 100
VGS(th) Gate Threshold Voltage
2.0 4.0
100 —
1.5 4.0
V
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— 100
— -100
— 100 nA
— -100
IDSS Zero Gate Voltage Drain Current
RDS(on) Static Drain-to-Source Ã
— 10 — 25 µA
— 0.074 — 0.09
On-State Resistance (TO-3)
RDS(on) Static Drain-to-Source Ã
— 0.07 — 0.085
On-State Resistance (TO-257AA)
VSD Diode Forward Voltage Ã
— 1.2 — 1.2 V
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS= 80V, VGS =0V
VGS = 12V, ID =14A
VGS = 12V, ID =14A
VGS = 0V, IS = 18A
1. Part numbers IRHY57130CM (JANSR2N7484T3), IRHY53130CM (JANSF2N7484T3) and IRHY54130CM (JANSG2N7484T3)
2. Part number IRHY58130CM (JANSH2N7484T3)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET
(MeV/(mg/cm2))
Br 36.7
I 59.4
Au 82.3
Energy
(MeV)
309
341
350
Range
(µm) @VGS=0V @VGS=-5V
39.5 100
100
32.5 100
100
28.4 100
100
VDS (V)
@VGS=-10V
100
100
80
@VGS=-15V
100
35
25
@VGS=-20V
100
25
120
100
80
60
40
20
0
0 -5 -8 -10 -15 -20
VGS
Br
I
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
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