2SK3550-01R Datasheet: Power MOSFET SuperFAP-G series Target





2SK3550-01R Power MOSFET SuperFAP-G series Target Datasheet

Part Number 2SK3550-01R
Description Power MOSFET SuperFAP-G series Target
Manufacture Fuji Electric
Total Page 1 Pages
PDF Download Download 2SK3550-01R Datasheet PDF

Features: www.DataSheet4U.com Fuji Power MOSFET S uperFAP-G series Target Specification 2SK3550-01R (900V/1.4Ω/10A) TO-3PF P RELIMINARY 1) Package Items Drain-Sour ce Voltage Continuous Drain Current Pul sed Drain Current Gate-Source Voltage R epetitive and Non-Repetitive Maximum Av alanche Current Non-Repetitive Maximum Avalanche Energy Maximum Drain-Source d V/dt Peak Diode recovery dV/dt Maximum Power Dissipation Operating and Storage Temperature range This material and th e information herein is the property of Fuji Electric Co.,Ltd. They shall be n either reproduced, copied, lent, or dis closed in any way whatsoever for the us e of any third party nor used for the m anufacturing purposes without the expre ss written consent of Fuji Electric Co. ,Ltd. 2) Absolute Maximum Ratings (Tc= 25• Ž • @ VDS ID ID(pulse) VGS IAR EAS dVDS/dt dV/dt PD•@•—‚s c=2 5•Ž PD @Ta=25•Ž Tch Tstg unless otherwise specified) Ratings 900 ±10 40 ±30 10 330 20 5 130 3.13 150 -55 •` +150 Units V A A V A *1 kV/us kV/us *2 W W mJ .

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PRELIMINARY
2SK3550-01R (900V/1.4/10A)
1) Package
TO-3PF
2) Absolute Maximum Ratings (Tc=25 unless otherwise specified)
Items
Symbols
Ratings
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode recovery dV/dt
Maximum Power Dissipation
Operating and Storage
Temperature range
VDS
ID
ID(pulse)
VGS
IAR
EAS
dVDS/dt
dV/dt
PD c=25
PD @Ta=25
Tch
Tstg
900
±10
±40
±30
10
330
20
5
130
3.13
150
-55 +150
Units
V
A
A
V
A
mJ
kV/us
kV/us
W
W
*1
*2
3)Electrical Characteristics (Tch=25 unless otherwise specified)
Items
Symbols
Test Conditions
min.
Drain-Source Breakdown Voltage BVDSS
Gate Threshold Voltage
VGS(th)
Zero Gate Voltage Drain Current IDSS
Gate-Source Leakage Current IGSS
ID=250uA
ID=250uA
VDS=900V
VGS=0V
VGS=±30V
VGS=0V
VDS=VGS
Tch=25
Tch=125
VDS=0V
900
3.0
---
---
---
Drain-Source On-State Resistance RDS(on) ID=5A
VGS=10V ---
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller) Charge
Avalanche Capability
Diode Forward On-Voltage
Ciss
Coss
Crss
Qg
Qgs
Qgd
IAV
VSD
VDS=25V
VGS=0V
f=1MHz
Vcc=450V
ID=10A
VGS=10V
L=6.06mH Tch=25
IF=10A,VGS=0V,Tch=25
---
---
---
---
---
---
10
---
typ.
---
---
---
---
---
---
1350
150
7.5
37
12
10
---
1.0
max.
---
5.0
25
250
100
1.4
---
---
---
---
---
---
---
1.5
Units
V
V
A
A
nA
pF
nC
A
V
4) Thermal Characteristics
Items
Channel to Case
Channel to Ambient
Symbols
Rth(ch-c)
Rth(ch-a)
Test Conditions
min. typ. max. Units
0.962 /W
40.0 /W
*1 L=6.06mH,Vcc=90V
FD
µ
DSS ≤ °
DRAWN
CHECKED
REVISIONS
MA4LE
DATE
NAME APPROVED
Fuji Electric Co.,Ltd.

  






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