Effect Transistor. KHB2D0N60F Datasheet

KHB2D0N60F Transistor. Datasheet pdf. Equivalent


KEC semiconductor KHB2D0N60F
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TECHNICAL DATA
KHB2D0N60P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS= 600V, ID= 2.0A
Drain-Source ON Resistance :
RDS(ON)=5.0 @VGS = 10V
Qg(typ.) = 12.5nC
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KHB2D0N60P KHB2D0N60F
Drain-Source Voltage
VDSS 600 V
Gate-Source Voltage
VGSS
30 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
2.0 2.0*
1.3 1.3*
6.0 6.0*
120
5.4
5.5
A
mJ
mJ
V/ns
Drain Power
Dissipation
Tc=25
Derate above25
PD
54
0.43
23 W
0.18 W/
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case RthJC
2.32
5.5 /W
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-
Ambient
RthCS
RthJA
0.5
62.5
- /W
62.5 /W
* : Drain current limited by maximum junction temperature.
TO-220AB
A
E
P
K
L
D
MM
F
B
G
C
O
JQ
H
N 123
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_0.1
E 3.18 +_ 0.1
F 3.3 +_0.1
G 12.57 +_ 0.2
H 0.5 +_0.1
J 13.0 MAX
K 3.23 +_ 0.1
L 1.47 MAX
M 2.54 +_ 0.2
N 4.7 +_ 0.2
O 6.68 +_ 0.2
P 6.5
Q 2.76 +_ 0.2
TO-220IS
D
G
2005. 10. 24
Revision No : 1
S
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KHB2D0N60F Datasheet
Recommendation KHB2D0N60F Datasheet
Part KHB2D0N60F
Description (KHB2D0N60F/P) N-Channel MOS Field Effect Transistor
Feature KHB2D0N60F; www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KHB2D0N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTO.
Manufacture KEC semiconductor
Datasheet
Download KHB2D0N60F Datasheet




KEC semiconductor KHB2D0N60F
www.DataSheet4U.com
KHB2D0N60P/F
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
BVDSS
ID=250 A, VGS=0V
BVDSS/ Tj ID=250 A, Referenced to 25
IDSS VDS=600V, VGS=0V,
Vth VDS=VGS, ID=250 A
IGSS VGS= 30V, VDS=0V
RDS(ON)
VGS=10V, ID=1.0A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Source-Drain Diode Ratings
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Crss
Coss
VDS=480V, ID=2.0A
VGS=10V
(Note4,5)
VDD=300V
RL=150
RG=25
(Note4,5)
VDS=25V, VGS=0V, f=1.0MHz
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
VGS<Vth
ISP
VSD IS=2.0A, VGS=0V
trr IS=2.0A, VGS=0V,
Qrr dIs/dt=100A/ s
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 55mH, IS= 2.0A, VDD=50V, RG=25 , Starting Tj = 25 .
Note 3) IS 2.0A, dI/dt 300A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
MIN. TYP. MAX. UNIT
600 - - V
- 0.65 - V/
- - 10 A
2.0 - 4.0 V
- - 100 nA
- 3.8 5.0
- 12.5 17
- 2.2 - nC
- 5.4 -
- 16 40
- 50 110
ns
- 40 90
- 40 90
- 380 490
- 7.6 9.9 pF
- 35 46
- - 2.0
A
- - 6.0
- - 1.4 V
- 250 -
ns
- 1.31 -
C
2005. 10. 24
Revision No : 1
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KEC semiconductor KHB2D0N60F
www.DataSheet4U.com
KHB2D0N60P/F
101
VGS
TOP : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
100
ID - VDS
10-110-1
100 101
Drain - Source Voltage VDS (V)
1.5
VGS = 0V
IDS = 250
1.0
Vth - Tj
0.5
0.0
-100
-50 0 50 100
Junction Temperature Tj ( C )
150
IS - VSD
150 C 25 C
100
10-1
0.2
0.4 0.6 0.8 1.0 1.2
Source - Drain Voltage VSD (V)
1.4
2005. 10. 24
Revision No : 1
ID - VGS
100
150 C
25 C
-55 C
10-1
2
468
Gate - Source Voltage VGS (V)
10
RDS(ON) - ID
18
15
12
VGS = 10V
9
6
VGS = 20V
3
0
0123456
Drain Current ID (A)
2.5
VGS = 10V
IDS = 2.0A
2.0
RDS(ON) - Tj
1.5
1.0
0.5
0.0
-100
-50 0
50 100
Junction Temperture Tj ( C)
150
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