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SILICON TRANSISTOR. GISD1802 Datasheet

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SILICON TRANSISTOR. GISD1802 Datasheet






GISD1802 TRANSISTOR. Datasheet pdf. Equivalent




GISD1802 TRANSISTOR. Datasheet pdf. Equivalent





Part

GISD1802

Description

PNP EPITAXIAL PLANAR SILICON TRANSISTOR

Manufacture

GTM

Datasheet
Download GISD1802 Datasheet


GTM GISD1802

GISD1802; www.DataSheet4U.com ISSUED DATE :2005/01 /13 REVISED DATE : GISD1802 Descriptio n Features *Adoption of FBET, MBIT proc esses NP N EP ITAX I AL P L ANAR SIL I CO N T RANSI STOR The GISD1802 applie s to voltage regulators, relay drivers, lamp drivers, and electrical equipment . *Large current capacity and wide ASO *Low collector-to-emitter saturation v oltage *Fast switc.


GTM GISD1802

hing speed Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2. 40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5 .80 Absolute Maximum Ratings Parameter Junction Temperature Storage Temperatu re Collector to Base Voltage Collector to Emitter Voltage.


GTM GISD1802

Emitter to Base Voltage Collector Curre nt(DC) Collector Current(Pulse) Collect or Dissipation (Ta = 25 Symbol Tj Tstg VCBO VCEO VEBO IC ICP PD Tc=25 , unle ss otherwise specified) Ratings +150 -5 5 ~ +150 60 50 6 3 6 1 20 V V V A A W W Unit Electrical Characteristics (Ta = 25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT ton tstg tf Cob M.



Part

GISD1802

Description

PNP EPITAXIAL PLANAR SILICON TRANSISTOR

Manufacture

GTM

Datasheet
Download GISD1802 Datasheet




 GISD1802
www.DataSheet4U.com
ISSUED DATE :2005/01/13
REVISED DATE :
GISD1802
NPN EPITAXIAL PLANAR SILICON TRANSISTOR
Description
The GISD1802 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment.
Features
*Adoption of FBET, MBIT processes
*Large current capacity and wide ASO
*Low collector-to-emitter saturation voltage
*Fast switching speed
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings (Ta = 25 , unless otherwise specified)
Parameter
Symbol
Ratings
Junction Temperature
Tj
+150
Storage Temperature
Tstg -55 ~ +150
Collector to Base Voltage
VCBO
60
Collector to Emitter Voltage
VCEO
50
Emitter to Base Voltage
VEBO
6
Collector Current(DC)
IC
3
Collector Current(Pulse)
ICP
6
Collector Dissipation
PD
Tc=25
1
20
Unit
V
V
V
A
A
W
W
Electrical Characteristics (Ta = 25
Symbol
Min.
Typ.
V(BR)CBO
60 -
V(BR)CEO
50 -
V(BR)EBO
6-
ICBO
--
IEBO
--
VCE(sat)
- 0.19
VBE(sat)
- 0.94
hFE1
100 -
hFE2
35 -
fT - 150
ton - 70
tstg - 650
tf - 35
Cob - 25
unless otherwise specified)
Max.
Unit
- V IC=10uA, IE=0
- V IC=1mA, RBE=
- V IE=10uA, IC=0
1 A VCB=40V, IE=0
1 A VEB=4V, IC=0
0.5 V IC=2A, IB=0.1A
1.2 V IC=2A, IB=0.1A
560 VCE=2V, IC=0.1A
- VCE=2V, IC=3A
-
MHZ
VCE=10V,IC=50mA
- ns See test circuit
- ns See test circuit
- ns See test circuit
- pF VCB=10V, f=1MHz
Test Conditions
GISD1802
Page: 1/3





 GISD1802
Classification Of hFE1
Rank
R
Range
100 ~ 200
Switching Time Test Circuit
S
140 ~ 280
ISSUED DATE :2005/01/13
REVISED DATE :
T
200 ~ 400
U
280 ~ 560
Characteristics Curve
GISD1802
Page: 2/3





 GISD1802
ISSUED DATE :2005/01/13
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GISD1802
Page: 3/3



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