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POWER MOSFET. GJ09N20 Datasheet

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POWER MOSFET. GJ09N20 Datasheet






GJ09N20 MOSFET. Datasheet pdf. Equivalent




GJ09N20 MOSFET. Datasheet pdf. Equivalent





Part

GJ09N20

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/06/27 REVISED DA TE : GJ09N20 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 200V 380m 8.6A The GJ09N20 provide the desi gner with the best combination of fast switching, ruggedized device design, lo w on-resistance and cost-effectiveness. The TO-252 package is universally pref erred for all comm.
Manufacture

GTM

Datasheet
Download GJ09N20 Datasheet


GTM GJ09N20

GJ09N20; ercial-industrial surface mount applicat ions at power dissipation levels to app roximately 50 watts. Description Feat ures *Simple Drive Requirement *Lower On-resistance *Fast Switching Character istic Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.4 0 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2. 30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimet.


GTM GJ09N20

er Min. Max. 0.50 0.70 2.20 2.40 0.45 0. 55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Dr ain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Conti nuous Drain Current, VGS@10V Pulsed Dra in Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings 200 ±30 8.6 5.5 36 69 0.55 40 8.6 -55 ~ + 150 Unit V V A A A.


GTM GJ09N20

W W/ mJ A Total Power Dissipation Line ar Derating Factor Single Pulse Avalanc he Energy Avalanche Current Operating J unction and Storage Temperature Range EAS IAR Tj, Tstg Thermal Data Paramete r Thermal Resistance Junction-case Ther mal Resistance Junction-ambient Max. Ma x. Symbol Rthj-c Rthj-a Value 1.8 110 U nit /W /W GJ09N20 Page: 1/4 ISSUED D ATE :2005/06/27 RE.

Part

GJ09N20

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/06/27 REVISED DA TE : GJ09N20 N-CHANNEL ENHANCEMENT MOD E POWER MOSFET BVDSS RDS(ON) ID 200V 380m 8.6A The GJ09N20 provide the desi gner with the best combination of fast switching, ruggedized device design, lo w on-resistance and cost-effectiveness. The TO-252 package is universally pref erred for all comm.
Manufacture

GTM

Datasheet
Download GJ09N20 Datasheet




 GJ09N20
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/06/27
REVISED DATE :
GJ09N20
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
200V
380m
8.6A
Description
The GJ09N20 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications at power
dissipation levels to approximately 50 watts.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V
VDS
VGS
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
EAS
IAR
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
200
±30
8.6
5.5
36
69
0.55
40
8.6
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
Value
1.8
110
Unit
/W
/W
GJ09N20
Page: 1/4




 GJ09N20
ISSUED DATE :2005/06/27
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
200
-
2.0
-
-
--
0.24 -
- 4.0
3.7 -
- ±100
V VGS=0, ID=1mA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=5A
nA VGS= ±30V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 10 uA VDS=200V, VGS=0
- 100 uA VDS=160V, VGS=0
Static Drain-Source On-Resistance
Total Gate Charge3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
- 380 m VGS=10V, ID=5A
23 37
ID=8.6A
4 - nC VDS=160V
13 -
VGS=10V
12 -
VDD=100V
25 -
ID=8.6A
36
-
ns VGS=10V
RG=10
16 -
RD=11.6
500 800
90 -
40 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
225
2260
Max.
1.3
-
-
Unit Test Conditions
V IS=8.6A, VGS=0V
ns IS=8.6A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=50V, L=1mH, RG=25 , IAS=8.6A.
3. Pulse width 300us, duty cycle 2%.
GJ09N20
Page: 2/4




 GJ09N20
Characteristics Curve
ISSUED DATE :2005/06/27
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GJ09N20
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4






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