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PLANAR TRANSISTOR. GJ1182 Datasheet

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PLANAR TRANSISTOR. GJ1182 Datasheet






GJ1182 TRANSISTOR. Datasheet pdf. Equivalent




GJ1182 TRANSISTOR. Datasheet pdf. Equivalent





Part

GJ1182

Description

PNP SILICON EPITAXIAL PLANAR TRANSISTOR



Feature


www.DataSheet4U.com CORPORATION G J 11 8 2 Description Features The GJ1182 is designed for medium power amplifier app lications. Low collector saturation vol tage : VCE(sat)=-0.5V(Typ.) ISSUED DAT E :2005/10/06 REVISED DATE : P NP S IL I CO N E PITAX I AL PL ANAR T RANSI STO R Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6. 80 5.20 5.50 6.80 .
Manufacture

GTM

Datasheet
Download GJ1182 Datasheet


GTM GJ1182

GJ1182; 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Mi n. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Ab solute Maximum Ratings at Ta = 25 Param eter Junction Temperature Storage Tempe rature Collector to Base Voltage Collec tor to Emitter Voltage Emitter to Base Voltage Collector Current Collector Cur rent (Pulse, Pw=10.


GTM GJ1182

0ms) Total Power Dissipation(TC=25 ) Sym bol Tj Tstg VCBO VCEO VEBO IC IC PD Rat ings +150 -55~+150 -40 -32 -5 -2 -3 10 Unit V V V A A W Electrical Character istics (Ta = 25 Symbol BVCBO BVCEO BVEB O ICBO IEBO *VCE(sat) *hFE fT Cob Min. -40 -32 -5 82 Typ. -500 100 50 , unles s otherwise noted) Max. Unit Test Condi tions V IC=-50uA , IE=0 V IC=-1mA, IB=0 V IE=-50uA ,IC=0 .


GTM GJ1182

-1 uA VCB=-20V, IE=0 -1 uA VEB=-4V, IC=0 -800 mV IC=-2A, IB=-200mA 390 VCE=-3V, IC=-500mA MHz VCE=-5V, IC=-500mA, f=10 0MHz pF VCB=-10V, IE=0, f=1MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Classification Of hFE Rank Range P 82 ~ 180 Q 120 ~ 270 R 180 ~ 390 GJ1182 Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2005/10/06 REVISED DATE : Important .

Part

GJ1182

Description

PNP SILICON EPITAXIAL PLANAR TRANSISTOR



Feature


www.DataSheet4U.com CORPORATION G J 11 8 2 Description Features The GJ1182 is designed for medium power amplifier app lications. Low collector saturation vol tage : VCE(sat)=-0.5V(Typ.) ISSUED DAT E :2005/10/06 REVISED DATE : P NP S IL I CO N E PITAX I AL PL ANAR T RANSI STO R Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6. 80 5.20 5.50 6.80 .
Manufacture

GTM

Datasheet
Download GJ1182 Datasheet




 GJ1182
www.DataSheet4U.com
CORPORATION ISSUED DATE :2005/10/06
REVISED DATE :
GJ1182
PNP SILICON EPITAXIAL PLANAR TRANSISTOR
Description
The GJ1182 is designed for medium power amplifier applications.
Features
Low collector saturation voltage : VCE(sat)=-0.5V(Typ.)
Package Dimensions
TO-252
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Storage Temperature
Tstg
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current
IC
Collector Current (Pulse, Pw=100ms)
IC
Total Power Dissipation(TC=25 )
PD
Ratings
+150
-55~+150
-40
-32
-5
-2
-3
10
Unit
V
V
V
A
A
W
Electrical Characteristics (Ta = 25 , unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*hFE
fT
Cob
-40 - - V IC=-50uA , IE=0
-32 - - V IC=-1mA, IB=0
-5 - - V IE=-50uA ,IC=0
- - -1 uA VCB=-20V, IE=0
- - -1 uA VEB=-4V, IC=0
-
-500
-800
mV IC=-2A, IB=-200mA
82 - 390
VCE=-3V, IC=-500mA
- 100 - MHz VCE=-5V, IC=-500mA, f=100MHz
- 50 - pF VCB=-10V, IE=0, f=1MHz
Classification Of hFE
* Pulse Test: Pulse Width 380 s, Duty Cycle
Rank
P
Q
R
Range
82 ~ 180
120 ~ 270
180 ~ 390
2%
GJ1182
Page: 1/2




 GJ1182
Characteristics Curve
CORPORATION ISSUED DATE :2005/10/06
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ1182
Page: 2/2










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