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POWER MOSFET. GJ40T03 Datasheet

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POWER MOSFET. GJ40T03 Datasheet






GJ40T03 MOSFET. Datasheet pdf. Equivalent




GJ40T03 MOSFET. Datasheet pdf. Equivalent





Part

GJ40T03

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/11/22 REVISED DA TE : GJ40T 03 N-CHANNEL ENHANCEMENT MO DE POWER MOSFET BVDSS RDS(ON) ID 30V 25m 28A Description The GJ40T03 provi de the designer with the best combinati on of fast switching, ruggedized device design, low on-resistance and cost-eff ectiveness. The TO-252 package is unive rsally preferred f.
Manufacture

GTM

Datasheet
Download GJ40T03 Datasheet


GTM GJ40T03

GJ40T03; or all commercial-industrial surface mou nt applications and suited for low volt age applications such as DC/DC converte rs. *Low Gate Charge *Simple Drive Requ irement *Fast Switching Characteristic *RoHS Compliant Features Package Dime nsions TO-252 REF. A B C D E F S Mill imeter Min. Max. 6.40 6.80 5.20 5.50 6. 80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0 .60 0.90 REF. G H.


GTM GJ40T03

J K L M R Millimeter Min. Max. 0.50 0. 70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Cu rrent, VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1 Symbo l VDS VGS ID @TC=25 ID @TC=100 IDM PD @ TC=25 Tj, Tstg Ratings 30 ±25 28 24 9 5 31.25 0.25 -55 ~ .


GTM GJ40T03

+150 Unit V V A A A W W/ Total Power D issipation Linear Derating Factor Opera ting Junction and Storage Temperature R ange Thermal Data Parameter Thermal Re sistance Junction-case Thermal Resistan ce Junction-ambient Max. Max. Symbol Rt hj-c Rthj-a Value 4 110 Unit /W /W GJ4 0T03 Page: 1/4 ISSUED DATE :2005/11/2 2 REVISED DATE : Electrical Characteri stics (Tj = 25 Par.

Part

GJ40T03

Description

N-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/11/22 REVISED DA TE : GJ40T 03 N-CHANNEL ENHANCEMENT MO DE POWER MOSFET BVDSS RDS(ON) ID 30V 25m 28A Description The GJ40T03 provi de the designer with the best combinati on of fast switching, ruggedized device design, low on-resistance and cost-eff ectiveness. The TO-252 package is unive rsally preferred f.
Manufacture

GTM

Datasheet
Download GJ40T03 Datasheet




 GJ40T03
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/11/22
REVISED DATE :
GJ40T03
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
25m
28A
Description
The GJ40T03 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching Characteristic
*RoHS Compliant
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
VGS
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
30
±25
28
24
95
31.25
0.25
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
4
110
Unit
/W
/W
GJ40T03
Page: 1/4




 GJ40T03
ISSUED DATE :2005/11/22
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
30
-
1.0
-
-
-
0.032
-
15
-
-
-
3.0
-
±100
V VGS=0, ID=250uA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=18A
nA VGS= ±25V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 1 uA VDS=30V, VGS=0
- 25 uA VDS=24V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 25 m VGS=10V, ID=18A
- 45
VGS=4.5V, ID=14A
8.8 -
ID=18A
2.5 - nC VDS=20V
5.8 -
VGS=4.5V
6-
62 -
16 -
4.4 -
VDS=15V
ID=18A
ns VGS=10V
RG=3.3
RD=0.83
655 -
145 -
95 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.3
28
95
Unit Test Conditions
V IS=28A, VGS=0V, Tj=25
A VD=VG=0V, VS=1.3V
A
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ40T03
Page: 2/4




 GJ40T03
Characteristics Curve
ISSUED DATE :2005/11/22
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GJ40T03
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4






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