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SWITCHING TRANSISTOR. GJ5103 Datasheet

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SWITCHING TRANSISTOR. GJ5103 Datasheet






GJ5103 TRANSISTOR. Datasheet pdf. Equivalent




GJ5103 TRANSISTOR. Datasheet pdf. Equivalent





Part

GJ5103

Description

NPN HIGH SPEED SWITCHING TRANSISTOR



Feature


www.DataSheet4U.com ISSUED DATE :2005/10 /03 REVISED DATE : GJ5103 Description Features NPN HIGH SPEED SWITCHING TRAN SISTOR The GJ5103 is designed for high speed switching applications. Low satu ration voltage, typically VCE(sat) =0.1 5V at IC/IB=3A/0.15A High speed switchi ng, typically tf =0.1 s at IC=3A Wide S OA Complements to GJ1952 Package Dimen sions TO-252 REF..
Manufacture

GTM

Datasheet
Download GJ5103 Datasheet


GTM GJ5103

GJ5103; A B C D E F S Millimeter Min. Max. 6.4 0 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2. 30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.7 0 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum R atings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Volta ge Emitter to Base Voltage Collector Cu rrent (DC) Collect.


GTM GJ5103

or Current (Pulse PW=100ms) Total Device Dissipation (TA=25 ) Total Device Diss ipation (TC=25 ) Junction Temperature S torage Temperature Symbol VCBO VCEO VEB O IC IC PD PD TJ Tstg Ratings 100 60 5 5 10 1 10 150 -55 ~ +150 Unit V V V A A W W Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO * VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sa t)2 *hFE1 *hFE2 fT.


GTM GJ5103

Cob Min. 100 60 5 120 40 Typ. 0.15 210 80 unless otherwise noted) Max. 10 10 0.3 0.5 1.2 1.5 270 Unit V V V uA uA V V V V Test Conditions IC=50uA, IE=0 IC= 1mA, IB=0 IE=50uA, IC=0 VCB=100V, IE=0 VEB=5V, IC=0 IC=3A, IB=0.15A IC=4A, IB= 0.2A IC=3A, IB=0.15A IC=4A, IB=0.2A VCE =2V, IC=1A VCE=2V, IC=3A VCB=10V, IE=-0 .5A, f=30MHz VCE=10V, IE=0, f=1MHz MHz pF GJ5103 Page:.

Part

GJ5103

Description

NPN HIGH SPEED SWITCHING TRANSISTOR



Feature


www.DataSheet4U.com ISSUED DATE :2005/10 /03 REVISED DATE : GJ5103 Description Features NPN HIGH SPEED SWITCHING TRAN SISTOR The GJ5103 is designed for high speed switching applications. Low satu ration voltage, typically VCE(sat) =0.1 5V at IC/IB=3A/0.15A High speed switchi ng, typically tf =0.1 s at IC=3A Wide S OA Complements to GJ1952 Package Dimen sions TO-252 REF..
Manufacture

GTM

Datasheet
Download GJ5103 Datasheet




 GJ5103
www.DataSheet4U.com
ISSUED DATE :2005/10/03
REVISED DATE :
GJ5103
NPN HIGH SPEED SWITCHING TRANSISTOR
Description
The GJ5103 is designed for high speed switching applications.
Features
Low saturation voltage, typically VCE(sat) =0.15V at IC/IB=3A/0.15A
High speed switching, typically tf =0.1 s at IC=3A
Wide SOA
Complements to GJ1952
Package Dimensions
TO-252
Absolute Maximum Ratings (TA=25 )
Parameter
Symbol
Collector to Base Voltage
VCBO
Collector to Emitter Voltage
VCEO
Emitter to Base Voltage
VEBO
Collector Current (DC)
IC
Collector Current (Pulse PW=100ms)
IC
Total Device Dissipation (TA=25 )
PD
Total Device Dissipation (TC=25 )
PD
Junction Temperature
TJ
Storage Temperature
Tstg
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
100
60
5
5
10
1
10
150
-55 ~ +150
Unit
V
V
V
A
A
W
W
Electrical Characteristics (TA = 25
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
fT
Cob
Min.
100
60
5
-
-
-
-
-
-
120
40
-
-
Typ.
-
-
-
-
-
0.15
-
-
-
-
-
210
80
unless otherwise noted)
Max.
-
-
-
10
10
0.3
0.5
1.2
1.5
270
-
-
-
Unit
V
V
V
uA
uA
V
V
V
V
MHz
pF
Test Conditions
IC=50uA, IE=0
IC=1mA, IB=0
IE=50uA, IC=0
VCB=100V, IE=0
VEB=5V, IC=0
IC=3A, IB=0.15A
IC=4A, IB=0.2A
IC=3A, IB=0.15A
IC=4A, IB=0.2A
VCE=2V, IC=1A
VCE=2V, IC=3A
VCB=10V, IE=-0.5A, f=30MHz
VCE=10V, IE=0, f=1MHz
GJ5103
Page: 1/3




 GJ5103
ISSUED DATE :2005/10/03
REVISED DATE :
ton (Turn-on Time)
tstg (Storage Time)
tf (Fall Time)
-
-
-
- 0.3
IC=3A , RL=10
- 1.5 uS IB1=-IB2=0.15A
0.1 0.3
VCC 30V
Switching Time Test Circuit
*Measure using pulse current
Characteristics Curve
GJ5103
Page: 2/3




 GJ5103
ISSUED DATE :2005/10/03
REVISED DATE :
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GJ5103
Page: 3/3






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