DatasheetsPDF.com

POWER MOSFET. GJ6679 Datasheet

DatasheetsPDF.com

POWER MOSFET. GJ6679 Datasheet






GJ6679 MOSFET. Datasheet pdf. Equivalent




GJ6679 MOSFET. Datasheet pdf. Equivalent





Part

GJ6679

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/08/04 REVISED DA TE : GJ6679 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 9 m -75A The GJ6679 provide the designer with the best combination of fast swit ching, ruggedized device design, low on -resistance and cost-effectiveness. The TO-252 package is universally preferre d for all commerci.
Manufacture

GTM

Datasheet
Download GJ6679 Datasheet


GTM GJ6679

GJ6679; al-industrial surface mount applications and suited for low voltage application s such as DC/DC converters. *Simple Dri ve Requirement *Lower On-resistance *Fa st Switching Characteristic Descriptio n Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Ma x. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3 .00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Mi.


GTM GJ6679

llimeter Min. Max. 0.50 0.70 2.20 2.40 0 .45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.8 0 1.20 Absolute Maximum Ratings Parame ter Drain-Source Voltage Gate-Source Vo ltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Puls ed Drain Current 1 Symbol VDS VGS ID @ TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings -30 ±25 -75 -50 -300 89 0.71 -55 ~ +150 Unit V.


GTM GJ6679

V A A A W W/ Total Power Dissipation L inear Derating Factor Operating Junctio n and Storage Temperature Range Therma l Data Parameter Thermal Resistance Jun ction-case Thermal Resistance Junction- ambient Max. Max. Symbol Rthj-case Rthj -amb Value 1.4 110 Unit /W /W GJ6679 Page: 1/4 ISSUED DATE :2005/08/04 REVI SED DATE : Electrical Characteristics (Tj = 25 Parameter.

Part

GJ6679

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/08/04 REVISED DA TE : GJ6679 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 9 m -75A The GJ6679 provide the designer with the best combination of fast swit ching, ruggedized device design, low on -resistance and cost-effectiveness. The TO-252 package is universally preferre d for all commerci.
Manufacture

GTM

Datasheet
Download GJ6679 Datasheet




 GJ6679
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/08/04
REVISED DATE :
GJ6679
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-30V
9m
-75A
Description
The GJ6679 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V
VDS
VGS
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-case
Rthj-amb
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
-30
±25
-75
-50
-300
89
0.71
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
1.4
110
Unit
/W
/W
GJ6679
Page: 1/4




 GJ6679
ISSUED DATE :2005/08/04
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
-30
-
-1.0
-
-
-
-0.03
-
34
-
-
-
-3.0
-
±100
V VGS=0, ID=-250uA
V/ Reference to 25 , ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-24A
nA VGS= ±25V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- -1 uA VDS=-30V, VGS=0
- -25 uA VDS=-24V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 9 m VGS=-10V, ID=-30A
- 15
VGS=-4.5V, ID=-24A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 42 67
ID=-16A
Qgs - 6 - nC VDS=-24V
Qgd - 25 -
VGS=-4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 11 -
VDS=-15V
Tr
Td(off)
-
-
35
58
-
-
ID=-16A
ns VGS=-10V
RG=3.3
Tf - 78 -
RD=0.94
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 2870 4590
VGS=0V
- 960 -
pF VDS=-25V
- 740 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
47
43
Max.
-1.2
-
-
Unit Test Conditions
V IS=-24A, VGS=0V
ns IS=-16A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ6679
Page: 2/4




 GJ6679
Characteristics Curve
ISSUED DATE :2005/08/04
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GJ6679
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4






Recommended third-party GJ6679 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)