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POWER MOSFET. GJ9575 Datasheet

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POWER MOSFET. GJ9575 Datasheet






GJ9575 MOSFET. Datasheet pdf. Equivalent




GJ9575 MOSFET. Datasheet pdf. Equivalent





Part

GJ9575

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/03/18 REVISED DA TE : GJ9575 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -60V 9 0m -15A The GJ9575 provide the designe r with the best combination of fast swi tching, ruggedized device design, low o n-resistance and cost-effectiveness. Th e TO-252 package is universally preferr ed for all commerc.
Manufacture

GTM

Datasheet
Download GJ9575 Datasheet


GTM GJ9575

GJ9575; ial-industrial surface mount application s and suited for low voltage applicatio ns such as DC/DC converters. *Simple Dr ive Requirement *Lower On-resistance *F ast Switching Characteristic Descripti on Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. M ax. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF . G H J K L M R M.


GTM GJ9575

illimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0. 80 1.20 Absolute Maximum Ratings Param eter Drain-Source Voltage Gate-Source V oltage Continuous Drain Current, VGS@10 V Continuous Drain Current, VGS@10V Pul sed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tst g Ratings -60 ±25 -15 -9.5 -45 36 0.2 9 -55 ~ +150 Unit .


GTM GJ9575

V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Juncti on and Storage Temperature Range Therm al Data Parameter Thermal Resistance Ju nction-case Thermal Resistance Junction -ambient Max. Max. Symbol Rthj-c Rthj-a Value 3.5 110 Unit /W /W GJ9575 Page : 1/4 ISSUED DATE :2005/03/18 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Dra.

Part

GJ9575

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


www.DataSheet4U.com Pb Free Plating Pro duct ISSUED DATE :2005/03/18 REVISED DA TE : GJ9575 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -60V 9 0m -15A The GJ9575 provide the designe r with the best combination of fast swi tching, ruggedized device design, low o n-resistance and cost-effectiveness. Th e TO-252 package is universally preferr ed for all commerc.
Manufacture

GTM

Datasheet
Download GJ9575 Datasheet




 GJ9575
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/03/18
REVISED DATE :
GJ9575
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
-60V
90m
-15A
Description
The GJ9575 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
TO-252
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS@10V
VDS
VGS
ID @TC=25
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
ID @TC=100
IDM
Total Power Dissipation
PD @TC=25
Linear Derating Factor
Operating Junction and Storage Temperature Range Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
REF.
A
B
C
D
E
F
S
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
2.40 3.00
2.30 REF.
0.70 0.90
0.60 0.90
REF.
G
H
J
K
L
M
R
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0 0.15
0.90 1.50
5.40 5.80
0.80 1.20
Ratings
-60
±25
-15
-9.5
-45
36
0.29
-55 ~ +150
Unit
V
V
A
A
A
W
W/
Value
3.5
110
Unit
/W
/W
GJ9575
Page: 1/4




 GJ9575
ISSUED DATE :2005/03/18
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
-60
-
-1.0
-
-
-
-0.06
-
14
-
-
-
-3.0
-
±100
V VGS=0, ID=-250uA
V/ Reference to 25 , ID=-1mA
V VDS=VGS, ID=-250uA
S VDS=-10V, ID=-9A
nA VGS= ±25V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- -1 uA VDS=-60V, VGS=0
- -25 uA VDS=-48V, VGS=0
Static Drain-Source On-Resistance2 RDS(ON)
-
-
- 90 m VGS=-10V, ID=-12A
- 120
VGS=-4.5V, ID=-9A
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Qg - 17 27
ID=-9A
Qgs - 5 - nC VDS=-48V
Qgd - 6 -
VGS=-4.5V
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Td(on) - 10 -
VDS=-30V
Tr
Td(off)
-
-
19
46
-
-
ID=-9A
ns VGS=-10V
RG=3.3
Tf - 53 -
RD=3.3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
- 1660 2660
VGS=0V
- 160 -
pF VDS=-25V
- 100 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
56
159
Max.
-1.2
-
-
Unit Test Conditions
V IS=-9A, VGS=0V
ns IS=-9A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Pulse width 300us, duty cycle 2%.
GJ9575
Page: 2/4




 GJ9575
Characteristics Curve
ISSUED DATE :2005/03/18
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GJ9575
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Page: 3/4






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