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N-Channel MOSFET. SSR4N60B Datasheet

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N-Channel MOSFET. SSR4N60B Datasheet






SSR4N60B MOSFET. Datasheet pdf. Equivalent




SSR4N60B MOSFET. Datasheet pdf. Equivalent





Part

SSR4N60B

Description

N-Channel MOSFET



Feature


www.DataSheet4U.com SSR4N60B / SSU4N60B November 2001 SSR4N60B / SSU4N60B 60 0V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar , DMOS technology. This advanced techno logy has been especially tailored to mi nimize on-state resistance, provide sup erior switching perf.
Manufacture

Fairchild Semiconductor

Datasheet
Download SSR4N60B Datasheet


Fairchild Semiconductor SSR4N60B

SSR4N60B; ormance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Features • • • • • • 2.8A , 600V, RDS(on) = 2.5Ω @VGS = 10 V Lo w gate charge ( typical 22 nC) Low Crss ( typical 14 pF) Fast switching 100% a valanche tested Improved dv/dt capabili ty D D ! ! # " ! ! G S D-.


Fairchild Semiconductor SSR4N60B

PAK SSR Series I-PAK G D S SSU Series G! ! S Absolute Maximum Ratings Symb ol VDSS ID IDM VGSS EAS IAR EAR dv/dt P D TC = 25°C unless otherwise noted P arameter Drain-Source Voltage - Continu ous (TC = 25°C) Drain Current - Contin uous (TC = 100°C) Drain Current - Puls ed (Note 1) SSR4N60B / SSU4N60B 600 2. 8 1.8 11.2 ± 30 (Note 2) (Note 1) (Not e 1) (Note 3) Units V.


Fairchild Semiconductor SSR4N60B

A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Aval anche Energy Avalanche Current Repetiti ve Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) 240 2. 8 4.9 5.5 2.5 49 0.39 -55 to +150 300 TJ, Tstg TL - Derate above 25°C Opera ting and Storage Temperature Range Maxi mum lead temperature for.

Part

SSR4N60B

Description

N-Channel MOSFET



Feature


www.DataSheet4U.com SSR4N60B / SSU4N60B November 2001 SSR4N60B / SSU4N60B 60 0V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar , DMOS technology. This advanced techno logy has been especially tailored to mi nimize on-state resistance, provide sup erior switching perf.
Manufacture

Fairchild Semiconductor

Datasheet
Download SSR4N60B Datasheet




 SSR4N60B
www.DataSheet4U.com
November 2001
SSR4N60B / SSU4N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 2.8A, 600V, RDS(on) = 2.5@VGS = 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 14 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
GS
D-PAK
SSR Series
GDS
I-PAK
SSU Series
G!
D
!
!
#"
!
!
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8!"from case for 5 seconds
SSR4N60B / SSU4N60B
600
2.8
1.8
11.2
± 30
240
2.8
4.9
5.5
2.5
49
0.39
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
Typ Max Units
-- 2.56 °C/W
-- 50 °C/W
-- 110 °C/W
Rev. B, November 2001




 SSR4N60B
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
600 --
ID = 250 µA, Referenced to 25°C -- 0.65
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
-- --
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 1.4 A
VDS = 40 V, ID = 1.4 A (Note 4)
2.0
--
--
--
2.0
3.7
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 710
-- 65
-- 14
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 300 V, ID = 4.0 A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 4.0 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
20
55
70
55
22
4.8
8.5
--
--
10
100
100
-100
4.0
2.5
--
920
85
19
50
120
150
120
29
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 2.8
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 11.2
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.8 A
-- -- 1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 4.0 A,
-- 330
dIF / dt = 100 A/µs
(Note 4) -- 2.67
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 56mH, IAS = 2.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD # 4.0A, di/dt # 300A/µs, VDD # BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width # 300µs, Duty cycle # 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001




 SSR4N60B
Typical Characteristics
101
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
100 Bottom: 5.0 V
10-1
10-1
% Notes :
1. 250& s Pulse Test
2. TC = 25$
100 101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
12
10
V = 10V
GS
8
6
V = 20V
GS
4
2
% Note : T = 25$
J
0
0 2 4 6 8 10 12
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1500
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
C
iss
500
C
oss
% Notes :
C
rss
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
150oC
100
25oC
10-1
2
-55oC
% Notes :
1.
2.
V25DS0&=
40V
s Pulse
Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150$
25$
% Notes :
1.
2.
V25G0S&=
0V
s Pulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V = 120V
DS
V = 300V
DS
8 V = 480V
DS
6
4
2
% Note : ID = 4.0 A
0
0 4 8 12 16 20 24
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, November 2001






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