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P-Channel MOSFET. STN3PF06 Datasheet

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P-Channel MOSFET. STN3PF06 Datasheet






STN3PF06 MOSFET. Datasheet pdf. Equivalent




STN3PF06 MOSFET. Datasheet pdf. Equivalent





Part

STN3PF06

Description

P-Channel MOSFET



Feature


STN3PF06 P-channel 60 V - 0.20 Ω - 2.5 A - SOT-223 STripFET™ II Power MOSFE T Features Type STN3PF06 VDSS 60 V RDS(on) max < 0.22 Ω ID 2.5 A ■ E xtremely dv/dt capability ■ 100% aval anche tested ■ Application oriented c haracterization Application ■ Switch ing applications Description This Powe r MOSFET is the latest development of S TMicroelectronics unique “single.
Manufacture

STMicroelectronics

Datasheet
Download STN3PF06 Datasheet


STMicroelectronics STN3PF06

STN3PF06; feature size” strip-based process. Th e resulting transistor shows extremely high packing density for low onresistan ce, rugged avalanche characteristics an d less critical alignment steps therefo re a remarkable manufacturing reproduci bility. 2 3 2 1 SOT-223 Figure 1. Inte rnal schematic diagram Table 1. Device summary Order code STN3PF06 Marking N 3PF06 Package SOT-2.


STMicroelectronics STN3PF06

23 Packaging Tape and reel March 2008 Rev 4 1/12 www.st.com 12 Contents Contents STN3PF06 1 Electrical ratin gs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical character istics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (c urves) . . . . . ..


STMicroelectronics STN3PF06

. . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Rev ision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Part

STN3PF06

Description

P-Channel MOSFET



Feature


STN3PF06 P-channel 60 V - 0.20 Ω - 2.5 A - SOT-223 STripFET™ II Power MOSFE T Features Type STN3PF06 VDSS 60 V RDS(on) max < 0.22 Ω ID 2.5 A ■ E xtremely dv/dt capability ■ 100% aval anche tested ■ Application oriented c haracterization Application ■ Switch ing applications Description This Powe r MOSFET is the latest development of S TMicroelectronics unique “single.
Manufacture

STMicroelectronics

Datasheet
Download STN3PF06 Datasheet




 STN3PF06
STN3PF06
P-channel 60 V - 0.20 - 2.5 A - SOT-223
STripFET™ II Power MOSFET
Features
Type
STN3PF06
VDSS
60 V
RDS(on)
max
< 0.22
ID
2.5 A
Extremely dv/dt capability
100% avalanche tested
Application oriented characterization
Application
Switching applications
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
2
3
2
1
SOT-223
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STN3PF06
Marking
N3PF06
Package
SOT-223
Packaging
Tape and reel
March 2008
Rev 4
1/12
www.st.com
12




 STN3PF06
Contents
Contents
STN3PF06
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12




 STN3PF06
STN3PF06
1
Electrical ratings
Electrical ratings
Note:
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
VGS
ID
ID
IDM (1)
PTOT
dv/dt (2)
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
Peak diode recovery voltage slope
Tj
Operating junction temperature
Tstg
Storage temperature
1. Pulse width limited by safe operating area
2. ISD 3A, di/dt 200 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
60
±20
2.5
1.5
10
2.5
0.02
6
-65 to 150
V
V
A
A
A
W
W/°C
V/ns
°C
Symbol
Parameter
Value
Unit
Rthj-pcb
Rthj-a
Thermal resistance junction-pcb board max
Thermal resistance junction-ambient max(1)
Tl
Maximum lead temperature for soldering purpose
1. Surface mounted
50
°C/W
62.5
°C/W
260
°C
For the p-channel Power MOSFET actual polarity of voltages and current has to be reversed
3/12






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