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N-CHANNEL MOSFET. STQ1HNK60R Datasheet

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N-CHANNEL MOSFET. STQ1HNK60R Datasheet






STQ1HNK60R MOSFET. Datasheet pdf. Equivalent




STQ1HNK60R MOSFET. Datasheet pdf. Equivalent





Part

STQ1HNK60R

Description

N-CHANNEL MOSFET



Feature


www.DataSheet4U.com STD1NK60 - STD1NK60 -1 STQ1HNK60R - STN1HNK60 N-CHANNEL 60 0V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH™ MOSFET Table 1: General Fe atures TYPE STD1NK60 STD1NK60-1 STQ1HNK 60R STN1HNK60 s s s s s s Figure 1: Pa ckage ID 1A 1A 0.4 A 0.4 A Pw 30 W 30 W 3W 3.3 W Ω Ω Ω Ω VDSS 600 600 600 600 V V V V RDS(on) < < < < 8.5 8 .5 8.5 8.5 3 1 TYPICAL RDS(o.
Manufacture

STMicroelectronics

Datasheet
Download STQ1HNK60R Datasheet


STMicroelectronics STQ1HNK60R

STQ1HNK60R; n) = 8 Ω EXTREMELY HIGH dv/dt CAPABILI TY ESD IMPROVED CAPABILITY 100% AVALANC HE TESTED NEW HIGH VOLTAGE BENCHMARK GA TE CHARGE MINIMIZED TO-92 (Ammopack) DPAK 2 3 2 1 1 2 3 DESCRIPTION Th e SuperMESH™ series is obtained throu gh an extreme optimization of ST’s we ll established strip-based PowerMESH™ layout. In addition to pushing on-resi stance significantly down,.


STMicroelectronics STQ1HNK60R

special care is taken to ensure a very good dv/dt capability for the most dema nding applications. Such series complem ents ST full range of high voltage MOSF ETs including revolutionary MDmesh™ p roducts. SOT-223 IPAK Figure 2: Inter nal Schematic Diagram APPLICATIONS s L OW POWER BATTERY CHARGERS s SWITH MODE LOW POWER SUPPLIES(SMPS) s LOW POWER, B ALLAST, CFL (COMPACT.


STMicroelectronics STQ1HNK60R

FLUORESCENT LAMPS) Table 2: Order Code s Part Number STD1NK60T4 STD1NK60-1 STQ 1HNK60R STQ1HNK60R-AP STN1HNK60 Marking D1NK60 D1NK60 1HNK60R 1HNK60R 1HNK60 P ackage DPAK IPAK TO-92 TO-92 SOT-223 Pa ckaging TAPE & REEL TUBE BULK AMMOPAK T APE & REEL Rev. 2 November 2004 1/15 S TD1NK60 - STD1NK60-1 - STQ1HNK60R - STN 1HNK60 Table 3: Absolute Maximum rating s Symbol VDS VDGR .

Part

STQ1HNK60R

Description

N-CHANNEL MOSFET



Feature


www.DataSheet4U.com STD1NK60 - STD1NK60 -1 STQ1HNK60R - STN1HNK60 N-CHANNEL 60 0V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH™ MOSFET Table 1: General Fe atures TYPE STD1NK60 STD1NK60-1 STQ1HNK 60R STN1HNK60 s s s s s s Figure 1: Pa ckage ID 1A 1A 0.4 A 0.4 A Pw 30 W 30 W 3W 3.3 W Ω Ω Ω Ω VDSS 600 600 600 600 V V V V RDS(on) < < < < 8.5 8 .5 8.5 8.5 3 1 TYPICAL RDS(o.
Manufacture

STMicroelectronics

Datasheet
Download STQ1HNK60R Datasheet




 STQ1HNK60R
www.DataSheet4U.com
STD1NK60 - STD1NK60-1
STQ1HNK60R - STN1HNK60
N-CHANNEL 600V - 8- 1A DPAK/TO-92/IPAK/SOT-223
SuperMESH™ MOSFET
Table 1: General Features
TYPE
VDSS RDS(on)
ID
Pw
STD1NK60
STD1NK60-1
STQ1HNK60R
STN1HNK60
600 V
600 V
600 V
600 V
< 8.5
< 8.5
< 8.5
< 8.5
1A
1A
0.4 A
0.4 A
30 W
30 W
3W
3.3 W
s TYPICAL RDS(on) = 8
s EXTREMELY HIGH dv/dt CAPABILITY
s ESD IMPROVED CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
Figure 1: Package
TO-92 (Ammopack)
3
1
DPAK
3
2
1
IPAK
2
3
2
1
SOT-223
Figure 2: Internal Schematic Diagram
APPLICATIONS
s LOW POWER BATTERY CHARGERS
s SWITH MODE LOW POWER
SUPPLIES(SMPS)
s LOW POWER, BALLAST, CFL (COMPACT
FLUORESCENT LAMPS)
Table 2: Order Codes
Part Number
STD1NK60T4
STD1NK60-1
STQ1HNK60R
STQ1HNK60R-AP
STN1HNK60
Marking
D1NK60
D1NK60
1HNK60R
1HNK60R
1HNK60
November 2004
Package
DPAK
IPAK
TO-92
TO-92
SOT-223
Packaging
TAPE & REEL
TUBE
BULK
AMMOPAK
TAPE & REEL
Rev. 2
1/15




 STQ1HNK60R
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 1.0A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
DPAK / IPAK
1.0
0.63
4
30
0.24
Value
TO-92
600
600
± 30
0.4
0.25
1.6
3
0.025
3
-55 to 150
SOT-223
0.4
0.25
1.6
3.3
0.025
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Rthj-lead Thermal Resistance Junction-lead Max
Tl Maximum Lead Temperature For Soldering
Purpose
(#) When mounted on FR-4 board of 1 in2 , 2oz Cu, t < 10 sec
DPAK/IPAK
4.16
100
--
275
TO-92
SOT-223
-- --
120 37.87 (#)
40 --
260
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
1
25
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
Unit
°C/W
°C/W
°C/W
°C
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
600
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.25 3
3.7
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 0.5 A
8 8.5
Unit
V
µA
µA
nA
V
2/15




 STQ1HNK60R
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
td(on)
tr
td(off)
tr
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDS = 15 V, ID= 0.5 A
VDS = 25V, f = 1 MHz, VGS = 0
VDD = 300 V, ID = 0.5 A,
RG= 4.7 Ω, VGS = 10 V
(Resistive Load see, Figure
21)
VDD = 480V, ID = 1 A,
VGS = 10V, RG= 4.7
(see, Figure 23)
Min.
Table 8: Source Drain Diode
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 1.0 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.0 A, di/dt = 100 A/µs
VDD = 25V, Tj = 25°C
(see test circuit, Figure 22)
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.0 A, di/dt = 100 A/µs
VDD = 25V, Tj = 150°C
(see test circuit, Figure 22)
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Min.
Typ.
1
156
23.5
3.8
6.5
5
19
25
7
1.1
3.7
Typ.
140
240
3.3
229
377
3.3
Max.
10
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Max.
1
4
1.6
Unit
A
A
V
ns
µC
A
ns
µC
A
3/15






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