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N-CHANNEL MOSFET. STN1NF10 Datasheet

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N-CHANNEL MOSFET. STN1NF10 Datasheet






STN1NF10 MOSFET. Datasheet pdf. Equivalent




STN1NF10 MOSFET. Datasheet pdf. Equivalent





Part

STN1NF10

Description

N-CHANNEL MOSFET



Feature


www.DataSheet4U.com N-CHANNEL 100V - 0. 7 Ω - 1A SOT-223 STripFET™ II POWER MOSFET TYPE STN1NF10 s s STN1NF10 VD SS 100 V RDS(on) < 0.8 Ω ID 1A TYP ICAL RDS(on) = 0.7 Ω EXCEPTIONAL dv/d t CAPABILITY 2 DESCRIPTION This Power MOSFET is the latest development of ST Microelectronis unique "Single Feature Size™" strip-based process. The resul ting transistor shows extrem.
Manufacture

STMicroelectronics

Datasheet
Download STN1NF10 Datasheet


STMicroelectronics STN1NF10

STN1NF10; ely high packing density for low onresis tance, rugged avalanche characteristics and less critical alignment steps ther efore a remarkable manufacturing reprod ucibility. APPLICATIONS s DC-DC CONVERT ERS s DC MOTOR CONTROL (DISK DRIVERS, e tc.) 1 SOT-223 2 3 INTERNAL SCHEMAT IC DIAGRAM ABSOLUTE MAXIMUM RATINGS Sy mbol VDS VDGR VGS ID ID IDM(•) Ptot d v/dt (1) EAS (2) Tst.


STMicroelectronics STN1NF10

g Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ ) Gate- source Voltage Drain Current (c ontinuos) at TC = 25°C Drain Current ( continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25 C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche En ergy Storage Temperature Max. Operating Junction Temperature V.


STMicroelectronics STN1NF10

alue 100 100 ± 20 1 0.6 4 2.5 0.02 20 3 5 -55 to 150 (1) ISD ≤ 1A, di/dt ≤ 350A/µs, VDD ≤ V (BR)DSS, T j ≤ T JMAX (2) Starting T j = 25 oC, ID = 1A, VDD = 70V Unit V V V A A A W W/°C V/ ns mJ °C (•) Pulse width limited by safe operating area. October 2001 . 1 /8 STN1NF10 THERMAL DATA Rthj-pcb Rthj -pcb Tl Thermal Resistance Junction-PCB (1 inch2 copper board) Thermal R.

Part

STN1NF10

Description

N-CHANNEL MOSFET



Feature


www.DataSheet4U.com N-CHANNEL 100V - 0. 7 Ω - 1A SOT-223 STripFET™ II POWER MOSFET TYPE STN1NF10 s s STN1NF10 VD SS 100 V RDS(on) < 0.8 Ω ID 1A TYP ICAL RDS(on) = 0.7 Ω EXCEPTIONAL dv/d t CAPABILITY 2 DESCRIPTION This Power MOSFET is the latest development of ST Microelectronis unique "Single Feature Size™" strip-based process. The resul ting transistor shows extrem.
Manufacture

STMicroelectronics

Datasheet
Download STN1NF10 Datasheet




 STN1NF10
www.DataSheet4U.com
STN1NF10
N-CHANNEL 100V - 0.7- 1A SOT-223
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STN1NF10
100 V < 0.8
s TYPICAL RDS(on) = 0.7
s EXCEPTIONAL dv/dt CAPABILITY
ID
1A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC-DC CONVERTERS
s DC MOTOR CONTROL (DISK DRIVERS, etc.)
2
3
2
1
SOT-223
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
October 2001
.
Value
100
100
± 20
1
0.6
4
2.5
0.02
20
35
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 150
°C
(1) ISD 1A, di/dt 350A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 1A, VDD = 70V
1/8




 STN1NF10
STN1NF10
THERMAL DATA
Rthj-pcb
Rthj-pcb
Tl
Thermal Resistance Junction-PCB(1 inch2 copper board)
Thermal Resistance Junction-PCB (min. footprint)
Maximum Lead Temperature For Soldering Purpose
50 °C/W
90 °C/W
260 °C
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
100
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
Max.
1
10
±100
Unit
V
µA
µA
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
ID = 0.5 A
Min.
2
Typ.
3
0.7
Max.
4
0.8
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V
ID = 1 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
1
105
20
9
Max.
Unit
S
pF
pF
pF
2/8




 STN1NF10
STN1NF10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50 V
ID = 0.5 A
RG = 4.7
VGS = 10 V
(Resistive Load, Figure 3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD= 50 V ID= 1 A VGS= 10 V
Min.
Typ.
4
5.5
4
1
1.5
Max.
6
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 50 V
ID = 0.5 A
RG = 4.7Ω,
VGS = 10 V
(Resistive Load, Figure 3)
Min.
Typ.
13
6.5
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 1 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 1 A
di/dt = 100A/µs
VDD = 20 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
45
60
2.7
Max.
1
4
1.2
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8






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