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PERFORMANCE TRANSISTOR. GL159 Datasheet

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PERFORMANCE TRANSISTOR. GL159 Datasheet






GL159 TRANSISTOR. Datasheet pdf. Equivalent




GL159 TRANSISTOR. Datasheet pdf. Equivalent





Part

GL159

Description

PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

Manufacture

GTM

Datasheet
Download GL159 Datasheet


GTM GL159

GL159; www.DataSheet4U.com CORPORATION GL159 D escription Features ISSUED DATE :2005/ 07/19 REVISED DATE :2005/12/09C PNP SI LICON PLANAR HIGH CURRENT TRANSISTOR T he GL159 is designed for general purpos e switching and amplifier applications. 5 Amps continuous current, up to 15Amp s peak current Excellent gain character istic specified up to 10Amps Very low s aturation voltages.


GTM GL159

Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0 0.60 0.80 0.2 5 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13 TYP. 2.30 REF. 6.30 6.70 6 .30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Pa rameter Junction Temperature Storage Te mperature Collector to Base Voltage Col lector to Emitter .


GTM GL159

Voltage Emitter to Base Voltage Collecto r Current (DC) Collector Current (Pulse ) Total Power Dissipation Symbol Tj Tst g VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 -100 -60 -6 -5 -15 3 Unit V V V A A W *The power which can be dissi pated assuming the device is mounted in a typical manner on a P.C.B. with copp er equal to 4 square inch minimum. Ele ctrical Characteri.



Part

GL159

Description

PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

Manufacture

GTM

Datasheet
Download GL159 Datasheet




 GL159
www.DataSheet4U.com
CORPORATION ISSUED DATE :2005/07/19
REVISED DATE :2005/12/09C
GL159
PNP SILICON PLANAR HIGH CURRENT TRANSISTOR
Description
The GL159 is designed for general purpose switching and amplifier applications.
Features
5 Amps continuous current, up to 15Amps peak current
Excellent gain characteristic specified up to 10Amps
Very low saturation voltages
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0 10
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13 TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Junction Temperature
Tj
Ratings
+150
Unit
Storage Temperature
Tstg
-55~+150
Collector to Base Voltage
VCBO
-100
V
Collector to Emitter Voltage
VCEO
-60
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current (DC)
IC
-5
A
Collector Current (Pulse)
IC
-15
A
Total Power Dissipation
PD
3
W
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4
square inch minimum.
Electrical Characteristics(Ta = 25 ,unless otherwise stated)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Min.
-100
-60
-6
-
-
-
-
-
-
-
-
-
100
100
75
10
-
Typ.
-
-
-
-
-
-
-20
-85
-155
-370
-1.08
-0.935
200
200
90
25
120
Max.
-
-
-
-50
-50
-10
-50
-140
-210
-460
-1.24
-1.07
300
-
Unit
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
Test Conditions
IC=-100uA , IE=0
IC=-10mA, IB=0
IE=-100uA ,IC=0
VCB=-80V, IE=0
VCES=-60V
VEB=-6V, IC=0
IC=-100mA, IB=-10mA
IC=-1A, IB=-100mA
IC=-2A, IB=-200mA
IC=-5A, IB=-500mA
IC=-5A, IB=-500mA
VCE=-1V, IC=-5A
VCE=-1V, IC=-10mA
VCE=-1V, IC=-2A
VCE=-1V, IC=-5A
VCE=-1V, IC=-10A
VCE=-10V, IC=-100mA, f=50MHz
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 GL159
CORPORATION ISSUED DATE :2005/07/19
REVISED DATE :2005/12/09C
Cob - 74 - pF
ton
toff
- 82 -
- 350 -
ns
*Measured under pulse condition. Pulse width 300 s, Duty Cycle 2%
Spice parameter data is available upon request for this device.
Characteristics Curve
VCB=-10V, IE=0, f=1MHz
VCC=-10V, IC=-2A, IB1=IB2=-200mA
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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