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CURRENT TRANSISTOR. GL359 Datasheet

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CURRENT TRANSISTOR. GL359 Datasheet






GL359 TRANSISTOR. Datasheet pdf. Equivalent




GL359 TRANSISTOR. Datasheet pdf. Equivalent





Part

GL359

Description

PNP SILICON PLANAR HIGH CURRENT TRANSISTOR



Feature


www.DataSheet4U.com CORPORATION GL359 D escription Features ISSUED DATE :2005/ 10/27 REVISED DATE :2005/12/09B PNP SI LICON PLANAR HIGH CURRENT TRANSISTOR T he GL359 is designed for general purpos e switching and amplifier applications. 5 Amps continuous current, up to 10Amp s peak current Excellent gain character istic specified up to 10Amps Very low s aturation voltages.
Manufacture

GTM

Datasheet
Download GL359 Datasheet


GTM GL359

GL359; Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millime ter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Stor age Temperature Collector to Base Volta ge Collector to Emitt.


GTM GL359

er Voltage Emitter to Base Voltage Colle ctor Current (DC) Collector Current (Pu lse) Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +1 50 -55~+150 -140 -100 -6 -5 -10 3 Unit V V V A A W *The power which can be d issipated assuming the device is mounte d in a typical manner on a P.C.B. with copper equal to 4 square inch minimum. Electrical Charac.


GTM GL359

teristics(Ta = 25 Symbol BVCBO *BVCEO BV EBO ICBO ICES IEBO *VCE(sat)1 *VCE(sat) 2 *VCE(sat)3 *VCE(sat)4 *VBE(sat) *VBE( on) *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Mi n. -140 -100 -6 100 100 50 30 Typ. -20 -90 -160 -300 -1.01 -0.925 200 200 90 5 0 15 125 ,unless otherwise stated) Max . Unit Test Conditions V IC=-100uA , IE =0 V IC=-10mA, IB=0 V IE=-100uA ,IC=0 - 50 nA VCB=-100V, I.

Part

GL359

Description

PNP SILICON PLANAR HIGH CURRENT TRANSISTOR



Feature


www.DataSheet4U.com CORPORATION GL359 D escription Features ISSUED DATE :2005/ 10/27 REVISED DATE :2005/12/09B PNP SI LICON PLANAR HIGH CURRENT TRANSISTOR T he GL359 is designed for general purpos e switching and amplifier applications. 5 Amps continuous current, up to 10Amp s peak current Excellent gain character istic specified up to 10Amps Very low s aturation voltages.
Manufacture

GTM

Datasheet
Download GL359 Datasheet




 GL359
www.DataSheet4U.com
CORPORATION ISSUED DATE :2005/10/27
REVISED DATE :2005/12/09B
GL359
PNP SILICON PLANAR HIGH CURRENT TRANSISTOR
Description
The GL359 is designed for general purpose switching and amplifier applications.
Features
5 Amps continuous current, up to 10Amps peak current
Excellent gain characteristic specified up to 10Amps
Very low saturation voltages
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0° 10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55~+150
Collector to Base Voltage
VCBO
-140
V
Collector to Emitter Voltage
VCEO
-100
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current (DC)
IC
-5
A
Collector Current (Pulse)
IC
-10
A
Total Power Dissipation
PD
3
W
*The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4
square inch minimum.
Electrical Characteristics(Ta = 25 ,unless otherwise stated)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
*BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
-140
-
-
V IC=-100uA , IE=0
-100
-
-
V IC=-10mA, IB=0
-6 - - V IE=-100uA ,IC=0
- - -50 nA VCB=-100V, IE=0
- - -50 nA VCES=-100V
- - -10 nA VEB=-6V, IC=0
- -20 -50 mV IC=-100mA, IB=-10mA
- -90 -115 mV IC=-1A, IB=-100mA
*VCE(sat)3
*VCE(sat)4
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
-
-160
-220
mV IC=-2A, IB=-200mA
-
-300
-420
mV IC=-4A, IB=-400mA
-
-1.01
-1.17
V IC=-4A, IB=-400mA
-
-0.925
-1.16
V VCE=-1V, IC=-4A
100 200
VCE=-1V, IC=-10mA
100 200 300
VCE=-1V, IC=-1A
50 90
VCE=-1V, IC=-3A
30 50
VCE=-1V, IC=-4A
- 15
VCE=-1V, IC=-10A
- 125 - MHz VCE=-10V, IC=-100mA, f=50MHz
GL359
Page: 1/2




 GL359
CORPORATION ISSUED DATE :2005/10/27
REVISED DATE :2005/12/09B
Cob - 65 - pF
ton
toff
- 110 -
- 460 -
ns
*Measured under pulse condition. Pulse width 300 s, Duty Cycle 2%
Spice parameter data is available upon request for this device.
Characteristics Curve
VCB=-10V, IE=0, f=1MHz
VCC=-10V, IC=-2A, IB1=-200mA, IB2=200mA
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GL359
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