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gain TRANSISTOR. GL9401A Datasheet

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gain TRANSISTOR. GL9401A Datasheet






GL9401A TRANSISTOR. Datasheet pdf. Equivalent




GL9401A TRANSISTOR. Datasheet pdf. Equivalent





Part

GL9401A

Description

NPN SILICON PLANAR MEDIUM POWER high gain TRANSISTOR



Feature


www.DataSheet4U.com CORPORATION GL9401A Description Features ISSUED DATE :200 6/11/20 REVISED DATE : NPN SI L I CO N PL AN AR MEDI UM PO W ER HI G H G AI N T RANSI ST O R The GL9401A is designe d for general purpose switching and amp lifier applications. 5 Amps continuous current, up to 20Amps pulse current Low saturation voltages High Gain Package Dimensions SOT-2.
Manufacture

GTM

Datasheet
Download GL9401A Datasheet


GTM GL9401A

GL9401A; 23 REF. A C D E I H Millimeter Min. Ma x. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10 ° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.3 0 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3. 30 3.70 1.40 1.80 Absolute Maximum Rat ings at Ta = 25 Parameter Junction Temp erature Storage Temperature Collector t o Base Voltage Collector to Emitter Vol tage Emitter to Base .


GTM GL9401A

Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipatio n Symbol Tj Tstg VCBO VCEO VEBO IC ICM PD Ratings +150 -55~+150 80 30 5 5 20 2.5 Unit V V V A A W *The power whi ch can be dissipated assuming the devic e is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inch es. Electrical Characteristics (Ta = 2 5 Symbol Min. 80 8.


GTM GL9401A

0 30 80 5 280 300 300 180 , unless othe rwise stated) Typ. - Max. 10 10 10 60 100 250 330 1.05 1.0 1200 - Unit V V V V V nA nA nA mV mV mV mV V V Test Co nditions IC=100uA , IE=0 IC=100uA IC=10 mA, IB=0 IC=10uA, VEB=1V IE=100uA ,IC=0 VCB=35V, IE=0 VCES=35V VEB=4V, IC=0 IC =500mA, IB=10mA IC=1A, IB=10mA IC=3A, I B=30mA IC=5A, IB=50mA IC=5A, IB=50mA VC E=2V, IC=5A VCE=2V.

Part

GL9401A

Description

NPN SILICON PLANAR MEDIUM POWER high gain TRANSISTOR



Feature


www.DataSheet4U.com CORPORATION GL9401A Description Features ISSUED DATE :200 6/11/20 REVISED DATE : NPN SI L I CO N PL AN AR MEDI UM PO W ER HI G H G AI N T RANSI ST O R The GL9401A is designe d for general purpose switching and amp lifier applications. 5 Amps continuous current, up to 20Amps pulse current Low saturation voltages High Gain Package Dimensions SOT-2.
Manufacture

GTM

Datasheet
Download GL9401A Datasheet




 GL9401A
www.DataSheet4U.com
CORPORATION ISSUED DATE :2006/11/20
REVISED DATE :
GL9401A
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Description
The GL9401A is designed for general purpose switching and amplifier applications.
Features
5 Amps continuous current, up to 20Amps pulse current
Low saturation voltages
High Gain
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0° 10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
ICM
PD
Ratings
+150
-55~+150
80
30
5
5
20
2.5
Unit
V
V
V
A
A
W
*The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.
Electrical Characteristics (Ta = 25 , unless otherwise stated)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
80 - - V IC=100uA , IE=0
*BVCES
80 - - V IC=100uA
BVCEO
30 - - V IC=10mA, IB=0
BVCEV
80 - - V IC=10uA, VEB=1V
BVEBO
5 - - V IE=100uA ,IC=0
ICBO
- - 10 nA VCB=35V, IE=0
ICES
- - 10 nA VCES=35V
IEBO
- - 10 nA VEB=4V, IC=0
*VCE(sat)1
- - 60 mV IC=500mA, IB=10mA
*VCE(sat)2
- - 100 mV IC=1A, IB=10mA
*VCE(sat)3
- - 250 mV IC=3A, IB=30mA
*VCE(sat)4
- - 330 mV IC=5A, IB=50mA
*VBE(sat)
- - 1.05 V IC=5A, IB=50mA
*VBE(on)
- - 1.0 V VCE=2V, IC=5A
*hFE1
280 -
-
VCE=2V, IC=10mA
*hFE2
300 -
-
VCE=2V, IC=0.5A
*hFE3
300 - 1200
VCE=2V, IC=1A
*hFE4
180 -
-
VCE=2V, IC=5A
GL9401A
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 GL9401A
CORPORATION ISSUED DATE :2006/11/20
REVISED DATE :
*hFE5
fT
40 -
- 180
Cob - 45
ton - 125
toff - 380
*Measured under pulse condition. Pulse width
Characteristics Curve
-
- MHz
60 pF
-
-
ns
300 s, Duty Cycle 2%
VCE=2V, IC=20A
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
VCC=10V, IC=4A, IB1=IB2=40mA
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GL9401A
Page: 2/2










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