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CURRENT TRANSISTOR. GL949 Datasheet

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CURRENT TRANSISTOR. GL949 Datasheet






GL949 TRANSISTOR. Datasheet pdf. Equivalent




GL949 TRANSISTOR. Datasheet pdf. Equivalent





Part

GL949

Description

PNP SILICON PLANAR HIGH CURRENT TRANSISTOR



Feature


www.DataSheet4U.com CORPORATION GL949 D escription Features ISSUED DATE :2006/ 11/20 REVISED DATE : PNP SI L I CO N P L AN AR HI G H C URRE NT T RANSI ST O R The GL949 is designed for general pur pose switching and amplifier applicatio ns. 6Amps continuous current, up to 20A mps pulse current Very low saturation v oltages Package Dimensions SOT-223 R EF. A C D E I H M.
Manufacture

GTM

Datasheet
Download GL949 Datasheet


GTM GL949

GL949; illimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Ma x. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6 .70 3.30 3.70 3.30 3.70 1.40 1.80 Abso lute Maximum Ratings at Ta = 25 Paramet er Symbol Tj Tstg VCBO VCEO VEBO IC ICM PD Junction Temperature Storage Temper ature Collector to Base Voltage Collect or to Emitter Voltage.


GTM GL949

Emitter to Base Voltage Collector Curre nt (DC) Collector Current (Pulse) Total Power Dissipation Ratings +150 -55~+1 50 -50 -30 -6 -5.5 -20 3 Unit V V V A A W *The power which can be dissipate d assuming the device is mounted in typ ical manner on a PCB with copper equal to 2 inches x 2 inches. Electrical Cha racteristics (Ta = 25 Symbol Min. -50 - 50 -30 -6 100 100 .


GTM GL949

75 - , unless otherwise stated) Typ. 3 5 100 122 Max. -50 -50 -10 -75 -140 -2 70 -440 -1.25 -1.06 300 - Unit V V V V nA nA nA mV mV mV mV V V Test Conditi ons IC=-100uA , IE=0 IC=-1uA, RB 1k IC= -10mA, IB=0 IE=-100uA ,IC=0 VCB=-40V, I E=0 VCB=-40V, R 1k VEB=-6V, IC=0 IC=-50 0mA, IB=-20mA IC=-1A, IB=-20mA IC=-2A, IB=-200mA IC=-5.5A, IB=-500mA IC=-5.5A, IB=-500mA VCE=-1V.

Part

GL949

Description

PNP SILICON PLANAR HIGH CURRENT TRANSISTOR



Feature


www.DataSheet4U.com CORPORATION GL949 D escription Features ISSUED DATE :2006/ 11/20 REVISED DATE : PNP SI L I CO N P L AN AR HI G H C URRE NT T RANSI ST O R The GL949 is designed for general pur pose switching and amplifier applicatio ns. 6Amps continuous current, up to 20A mps pulse current Very low saturation v oltages Package Dimensions SOT-223 R EF. A C D E I H M.
Manufacture

GTM

Datasheet
Download GL949 Datasheet




 GL949
www.DataSheet4U.com
CORPORATION ISSUED DATE :2006/11/20
REVISED DATE :
GL949
PNP SILICON PLANAR HIGH CURRENT TRANSISTOR
Description
The GL949 is designed for general purpose switching and amplifier applications.
Features
6Amps continuous current, up to 20Amps pulse current
Very low saturation voltages
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min. Max.
6.70 7.30
2.90 3.10
0.02 0.10
0° 10°
0.60 0.80
0.25 0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min. Max.
13°TYP.
2.30 REF.
6.30 6.70
6.30 6.70
3.30 3.70
3.30 3.70
1.40 1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55~+150
Collector to Base Voltage
VCBO
-50
V
Collector to Emitter Voltage
VCEO
-30
V
Emitter to Base Voltage
VEBO
-6
V
Collector Current (DC)
IC
-5.5
A
Collector Current (Pulse)
ICM
-20
A
Total Power Dissipation
PD
3
W
*The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.
Electrical Characteristics (Ta = 25 , unless otherwise stated)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
-50 - - V IC=-100uA , IE=0
BVCER
-50 - - V IC=-1uA, RB 1k
BVCEO
-30 - - V IC=-10mA, IB=0
BVEBO
-6 - - V IE=-100uA ,IC=0
ICBO
- - -50 nA VCB=-40V, IE=0
ICER
- - -50 nA VCB=-40V, R 1k
IEBO
- - -10 nA VEB=-6V, IC=0
*VCE(sat)1
- - -75 mV IC=-500mA, IB=-20mA
*VCE(sat)2
-
-
-140
mV IC=-1A, IB=-20mA
*VCE(sat)3
-
-
-270
mV IC=-2A, IB=-200mA
*VCE(sat)4
-
-
-440
mV IC=-5.5A, IB=-500mA
*VBE(sat)
- - -1.25 V IC=-5.5A, IB=-500mA
*VBE(on)
- - -1.06 V VCE=-1V, IC=-5.5A
*hFE1
100 -
-
VCE=-1V, IC=-10mA
*hFE2
100 - 300
VCE=-1V, IC=-1A
*hFE3
75 -
-
VCE=-1V, IC=-5A
*hFE4
- 35 -
VCE=-2V, IC=-20A
fT - 100 - MHz VCE=-10V, IC=-100mA, f=50MHz
Cob
- 122 -
pF VCB=-10V, IE=0, f=1MHz
GL949
Page: 1/2




 GL949
CORPORATION ISSUED DATE :2006/11/20
REVISED DATE :
Ton
Toff
- 120 -
- 130 -
ns
*Measured under pulse condition. Pulse width=300 s, Duty Cycle 2%
Characteristics Curve
VCC=-10V, IC=-4A, IB1=-IB2=-400mA
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GL949
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