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SWITCHING SWITCHING. NP82N055EHE Datasheet







NP82N055EHE SWITCHING. Datasheet pdf. Equivalent






Part

NP82N055EHE

Description

(NP82N055xHE) MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING

Manufacture

NEC

Datasheet
Download NP82N055EHE Datasheet


NEC NP82N055EHE

NP82N055EHE; www.DataSheet4U.com DATA SHEET MOS FIE LD EFFECT TRANSISTOR NP82N055CHE,NP82N0 55DHE,NP82N055EHE,NP82N055KHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION T hese products are N-channel MOS Field E ffect Transistor designed for high curr ent switching applications. ORDERING I NFORMATION PART NUMBER NP82N055CHE NP82 N055DHE NP82N055EHE PACKAGE TO-220AB TO -262 TO-263 (MP-25.


NEC NP82N055EHE

ZJ) TO-263 (MP-25ZK) FEATURES • Chann el temperature 175 degree rated • Sup er low on-state resistance RDS(on) = 8. 6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 3500 pF TYP. • Buil t-in gate protection diode 5 NP82N055K HE (TO-220AB) ABSOLUTE MAXIMUM RATING S (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) No te1 Note2 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg 55 ±20 ±82 ±300 1.8 16 3 175 –55 to +175 72 / 49 / 17 51 / 2 40 / 289 V V A A W W °C °C A mJ (TO- 263) (TO-262) Drain Current (pulse) T otal Power Dissipation (TA = 25°C) Tot al Power Dissipation (TC = 25°C) Chann el Temperature Storage Temperature Sing le Avalanche Current Single Avalanche E nergy Note3 Note3 IAS EAS .



Part

NP82N055EHE

Description

(NP82N055xHE) MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING

Manufacture

NEC

Datasheet
Download NP82N055EHE Datasheet




 NP82N055EHE
www.DataSheet4U.com
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on) = 8.6 mMAX. (VGS = 10 V, ID = 41 A)
Low Ciss: Ciss = 3500 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP82N055CHE
TO-220AB
NP82N055DHE
TO-262
NP82N055EHE
5 NP82N055KHE
TO-263 (MP-25ZJ)
TO-263 (MP-25ZK)
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
V
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) Note1
Drain Current (pulse) Note2
VGSS
ID(DC)
ID(pulse)
±20
±82
±300
V
A
A
Total Power Dissipation (TA = 25°C)
PT
1.8 W
Total Power Dissipation (TC = 25°C)
PT
163 W
Channel Temperature
Tch 175 °C
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg –55 to +175 °C
IAS
72 / 49 / 17
A
EAS 51 / 240 / 289 mJ
Notes 1. Calculated constant current according to MAX. allowable channel
temperature.
2. PW 10 µs, Duty cycle 1%
3. Starting Tch = 25°C, VDD = 28 V, RG = 25 , VGS = 20 0 V (See Figure 4.)
(TO-262)
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.92 °C/W
83.3 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14138EJ5V0DS00 (5th edition)
Date Published December 2002 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
1999





 NP82N055EHE
NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 55 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate to Source Threshold Voltage
VGS(th) VDS = VGS, ID = 250 µA
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 41 A
Drain to Source On-state Resistance
RDS(on) VGS = 10 V, ID = 41 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V
VGS = 0 V
f = 1 MHz
Turn-on Delay Time
Rise Time
Turn-off Delay Time
td(on)
tr
td(off)
VDD = 28 V, ID = 41 A
VGS(on) = 10 V
RG = 1
Fall Time
tf
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VDD = 44 V
VGS = 10 V
ID = 82 A
Body Diode Forward Voltage
VF(S-D) IF = 82 A, VGS = 0 V
Reverse Recovery Time
Reverse Recovery Charge
trr IF = 82 A, VGS = 0 V
Qrr di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
10 µA
±10 µA
2.0 3.0 4.0 V
19 38
S
6.9 8.6 m
3500 5250 pF
550 830 pF
270 490 pF
31 69 ns
18 45 ns
61 120 ns
19 47 ns
65 100 nC
18 nC
24 nC
1.0 V
45 ns
63 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
PG. RG
VGS
0
τ
τ = 1µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off)
tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D14138EJ5V0DS



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